onsemi FGB40T65SPD_F085 IGBT, 40 A 650 V, 2+Tab-Pin D2PAK (TO-263), Surface Mount

RS Stok Numarası: 135-8687Marka: ON SemiconductorÜretici Parça Numarası: FGB40T65SPD_F085
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Teknik Belgeler

Özellikler

Marka

ON Semiconductor

Maksimum Sürekli Kollektör Akımı

40 A

Maksimum Kollektör Emitör Gerilimi

650 V

Maksimum Kapı Emitör Gerilimi

±20V

Maksimum Güç Kaybı

267 W

Transistör Sayısı

1

Paket Tipi

D2PAK (TO-263)

Montaj Tipi

Yüzeye Monte

İletken Tipi

N

Pim Sayısı

2+Tab

Transistör Yapılandırması

Tek

Boyutlar

10.67 x 9.65 x 4.83mm

Minimum Çalışma Sıcaklığı

-55°C

Kapı Kapasitansı

1520pF

Maksimum Çalışma Sıcaklığı

+175°C

Otomotiv Standardı

AEC-Q101

Ürün Ayrıntıları

Automotive IGBT, Fairchild Semiconductor

A range of Field Stop Trench IGBTs from Fairchild Semiconductor that have been stress tested and meet the AEC-Q101 standard.

Standards

AEC-Q101

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Stok bilgileri geçici olarak kullanılamıyor.

Ayrıntılı bilgi için iletşime geçiniz

Stok bilgileri geçici olarak kullanılamıyor.

P.O.A.

onsemi FGB40T65SPD_F085 IGBT, 40 A 650 V, 2+Tab-Pin D2PAK (TO-263), Surface Mount

1

Katlarında sipariş edilebilir 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

P.O.A.

onsemi FGB40T65SPD_F085 IGBT, 40 A 650 V, 2+Tab-Pin D2PAK (TO-263), Surface Mount
Stok bilgileri geçici olarak kullanılamıyor.

1

Katlarında sipariş edilebilir 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Teknik Belgeler

Özellikler

Marka

ON Semiconductor

Maksimum Sürekli Kollektör Akımı

40 A

Maksimum Kollektör Emitör Gerilimi

650 V

Maksimum Kapı Emitör Gerilimi

±20V

Maksimum Güç Kaybı

267 W

Transistör Sayısı

1

Paket Tipi

D2PAK (TO-263)

Montaj Tipi

Yüzeye Monte

İletken Tipi

N

Pim Sayısı

2+Tab

Transistör Yapılandırması

Tek

Boyutlar

10.67 x 9.65 x 4.83mm

Minimum Çalışma Sıcaklığı

-55°C

Kapı Kapasitansı

1520pF

Maksimum Çalışma Sıcaklığı

+175°C

Otomotiv Standardı

AEC-Q101

Ürün Ayrıntıları

Automotive IGBT, Fairchild Semiconductor

A range of Field Stop Trench IGBTs from Fairchild Semiconductor that have been stress tested and meet the AEC-Q101 standard.

Standards

AEC-Q101

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more