Infineon IGW30N60TPXKSA1 IGBT, 53 A 600 V, 3-Pin TO-247, Through Hole
Teknik Belgeler
Özellikler
Marka
InfineonMaksimum Sürekli Kollektör Akımı
53 A
Maksimum Kollektör Emitör Gerilimi
600 V
Maksimum Kapı Emitör Gerilimi
±20V
Maksimum Güç Kaybı
200 W
Transistör Sayısı
1
Paket Tipi
TO-247
Montaj Tipi
Açık Delik
İletken Tipi
N
Pim Sayısı
3
Anahtarlama Hızı
30kHz
Transistör Yapılandırması
Tek
Boyutlar
16.13 x 5.21 x 21.1mm
Minimum Çalışma Sıcaklığı
-40°C
Kapı Kapasitansı
1050pF
Maksimum Çalışma Sıcaklığı
+175°C
Enerji Değeri
1.13mJ
Menşe
China
Ürün Ayrıntıları
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stok bilgileri geçici olarak kullanılamıyor.
Ayrıntılı bilgi için iletşime geçiniz
86,043 TL
Each (In a Pack of 2) KDV Hariç
103,252 TL
Each (In a Pack of 2) KDV Dahil
2
86,043 TL
Each (In a Pack of 2) KDV Hariç
103,252 TL
Each (In a Pack of 2) KDV Dahil
2
Toptan Satın Al
| Miktar | Birim Fiyat | Per Paket |
|---|---|---|
| 2 - 18 | 86,043 TL | 172,09 TL |
| 20 - 48 | 77,443 TL | 154,89 TL |
| 50 - 98 | 72,283 TL | 144,57 TL |
| 100 - 198 | 67,123 TL | 134,25 TL |
| 200+ | 62,823 TL | 125,65 TL |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Teknik Belgeler
Özellikler
Marka
InfineonMaksimum Sürekli Kollektör Akımı
53 A
Maksimum Kollektör Emitör Gerilimi
600 V
Maksimum Kapı Emitör Gerilimi
±20V
Maksimum Güç Kaybı
200 W
Transistör Sayısı
1
Paket Tipi
TO-247
Montaj Tipi
Açık Delik
İletken Tipi
N
Pim Sayısı
3
Anahtarlama Hızı
30kHz
Transistör Yapılandırması
Tek
Boyutlar
16.13 x 5.21 x 21.1mm
Minimum Çalışma Sıcaklığı
-40°C
Kapı Kapasitansı
1050pF
Maksimum Çalışma Sıcaklığı
+175°C
Enerji Değeri
1.13mJ
Menşe
China
Ürün Ayrıntıları
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products