Teknik Belgeler
Özellikler
Bellek Boyutu
64kbit
Düzen
8K x 8 bit
Arabirim Tipi
SPI
Montaj Tipi
Yüzeye Monte
Paket Tipi
SOIC
Pim Sayısı
8
Boyutlar
4.97 x 3.98 x 1.48mm
Uzunluk
4.97mm
Genişlik
3.98mm
Maksimum Çalışma Besleme Gerilimi
3,6 V
Yükseklik
1.48mm
Maksimum Çalışma Sıcaklığı
+125°C
Kelime Sayısı
8K
Minimum Çalışma Sıcaklığı
-40°C
Minimum Çalışma Besleme Gerilimi
3 V
Kelime başına Bit Sayısı
8bit
Ürün Ayrıntıları
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Stok bilgileri geçici olarak kullanılamıyor.
Ayrıntılı bilgi için iletşime geçiniz
P.O.A.
2
P.O.A.
2
Teknik Belgeler
Özellikler
Bellek Boyutu
64kbit
Düzen
8K x 8 bit
Arabirim Tipi
SPI
Montaj Tipi
Yüzeye Monte
Paket Tipi
SOIC
Pim Sayısı
8
Boyutlar
4.97 x 3.98 x 1.48mm
Uzunluk
4.97mm
Genişlik
3.98mm
Maksimum Çalışma Besleme Gerilimi
3,6 V
Yükseklik
1.48mm
Maksimum Çalışma Sıcaklığı
+125°C
Kelime Sayısı
8K
Minimum Çalışma Sıcaklığı
-40°C
Minimum Çalışma Besleme Gerilimi
3 V
Kelime başına Bit Sayısı
8bit
Ürün Ayrıntıları
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.