ON Semiconductor FDD6685 P-Kanallı Si MOSFET Transistör, 11 A, 30 V, 3-Pinli DPAK (TO-252)

RS Stok Numarası: 809-0916PMarka: onsemiÜretici Parça Numarası: FDD6685
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Teknik Belgeler

Özellikler

Marka

onsemi

İletken Tipi

P

Maksimum Sürekli Tahliye Akımı

11 A

Maksimum Tahliye Kaynağı Gerilimi

30 V

Seri

PowerTrench

Paket Tipi

DPAK (TO-252)

Montaj Tipi

Yüzeye Monte

Pim Sayısı

3

Maksimum Tahliye Kaynağı Direnci

30 mΩ

Kanal Modu

Artırma

Minimum Kapı Eşiği Gerilimi

1V

Maksimum Güç Kaybı

52 W

Transistör Yapılandırması

Tek

Maksimum Kapı Kaynak Gerilimi

-25 V, +25 V

Yonga Başına Eleman Sayısı

1

Maksimum Çalışma Sıcaklığı

+175°C

Uzunluk

6.73mm

Vgs'de Tipik Kapak Şarjı

5 V'de 17 nC

Genişlik

6.22mm

Transistör Malzemesi

Si

Minimum Çalışma Sıcaklığı

-55°C

Yükseklik

2.39mm

Ürün Ayrıntıları

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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Stok bilgileri geçici olarak kullanılamıyor.

Ayrıntılı bilgi için iletşime geçiniz

Stok bilgileri geçici olarak kullanılamıyor.

31,349 TL

Each (Supplied on a Reel) (KDV Hariç)

37,619 TL

Each (Supplied on a Reel) KDV Dahil

ON Semiconductor FDD6685 P-Kanallı Si MOSFET Transistör, 11 A, 30 V, 3-Pinli DPAK (TO-252)
Paketlenme türü seçiniz

31,349 TL

Each (Supplied on a Reel) (KDV Hariç)

37,619 TL

Each (Supplied on a Reel) KDV Dahil

ON Semiconductor FDD6685 P-Kanallı Si MOSFET Transistör, 11 A, 30 V, 3-Pinli DPAK (TO-252)
Stok bilgileri geçici olarak kullanılamıyor.
Paketlenme türü seçiniz

Toptan Satın Al

MiktarBirim FiyatPer Makara
10 - 9031,349 TL313,49 TL
100 - 24023,453 TL234,53 TL
250 - 49022,842 TL228,42 TL
500 - 99019,928 TL199,28 TL
1000+16,591 TL165,91 TL

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Teknik Belgeler

Özellikler

Marka

onsemi

İletken Tipi

P

Maksimum Sürekli Tahliye Akımı

11 A

Maksimum Tahliye Kaynağı Gerilimi

30 V

Seri

PowerTrench

Paket Tipi

DPAK (TO-252)

Montaj Tipi

Yüzeye Monte

Pim Sayısı

3

Maksimum Tahliye Kaynağı Direnci

30 mΩ

Kanal Modu

Artırma

Minimum Kapı Eşiği Gerilimi

1V

Maksimum Güç Kaybı

52 W

Transistör Yapılandırması

Tek

Maksimum Kapı Kaynak Gerilimi

-25 V, +25 V

Yonga Başına Eleman Sayısı

1

Maksimum Çalışma Sıcaklığı

+175°C

Uzunluk

6.73mm

Vgs'de Tipik Kapak Şarjı

5 V'de 17 nC

Genişlik

6.22mm

Transistör Malzemesi

Si

Minimum Çalışma Sıcaklığı

-55°C

Yükseklik

2.39mm

Ürün Ayrıntıları

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more