onsemi FGH60N60SMD-F085 IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole

RS Stok Numarası: 146-2047Marka: onsemiÜretici Parça Numarası: FGH60N60SMD-F085
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Teknik Belgeler

Özellikler

Marka

onsemi

Maksimum Sürekli Kollektör Akımı

120 A

Maksimum Kollektör Emitör Gerilimi

600 V

Maksimum Kapı Emitör Gerilimi

±20V

Maksimum Güç Kaybı

600 W

Paket Tipi

TO-247

Montaj Tipi

Açık Delik

İletken Tipi

N

Pim Sayısı

3

Transistör Yapılandırması

Tek

Boyutlar

15.6 x 4.7 x 20.6mm

Maksimum Çalışma Sıcaklığı

+175°C

Minimum Çalışma Sıcaklığı

-55°C

Ürün Ayrıntıları

Automotive IGBT, Fairchild Semiconductor

A range of Field Stop Trench IGBTs from Fairchild Semiconductor that have been stress tested and meet the AEC-Q101 standard.

Standards

AEC-Q101

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Stok bilgileri geçici olarak kullanılamıyor.

Ayrıntılı bilgi için iletşime geçiniz

Stok bilgileri geçici olarak kullanılamıyor.

226,399 TL

Each (In a Tube of 30) KDV Hariç

271,679 TL

Each (In a Tube of 30) KDV Dahil

onsemi FGH60N60SMD-F085 IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole

226,399 TL

Each (In a Tube of 30) KDV Hariç

271,679 TL

Each (In a Tube of 30) KDV Dahil

onsemi FGH60N60SMD-F085 IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole
Stok bilgileri geçici olarak kullanılamıyor.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Teknik Belgeler

Özellikler

Marka

onsemi

Maksimum Sürekli Kollektör Akımı

120 A

Maksimum Kollektör Emitör Gerilimi

600 V

Maksimum Kapı Emitör Gerilimi

±20V

Maksimum Güç Kaybı

600 W

Paket Tipi

TO-247

Montaj Tipi

Açık Delik

İletken Tipi

N

Pim Sayısı

3

Transistör Yapılandırması

Tek

Boyutlar

15.6 x 4.7 x 20.6mm

Maksimum Çalışma Sıcaklığı

+175°C

Minimum Çalışma Sıcaklığı

-55°C

Ürün Ayrıntıları

Automotive IGBT, Fairchild Semiconductor

A range of Field Stop Trench IGBTs from Fairchild Semiconductor that have been stress tested and meet the AEC-Q101 standard.

Standards

AEC-Q101

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more