Teknik Belgeler
Özellikler
Bellek Boyutu
16kbit
Düzen
2K x 8 bit
Arabirim Tipi
Seri 2 Kablo, Seri I2C
Montaj Tipi
Yüzeye Monte
Paket Tipi
SOIC
Pim Sayısı
8
Boyutlar
4.97 x 3.98 x 1.48mm
Maksimum Çalışma Besleme Gerilimi
5,5 V
Maksimum Çalışma Sıcaklığı
+85°C
Kelime Sayısı
2k
Minimum Çalışma Sıcaklığı
-40°C
Minimum Çalışma Besleme Gerilimi
4,5 V
Kelime başına Bit Sayısı
8bit
Ürün Ayrıntıları
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Stok bilgileri geçici olarak kullanılamıyor.
Ayrıntılı bilgi için iletşime geçiniz
65,532 TL
Each (In a Pack of 5) KDV Hariç
78,638 TL
Each (In a Pack of 5) KDV Dahil
5
65,532 TL
Each (In a Pack of 5) KDV Hariç
78,638 TL
Each (In a Pack of 5) KDV Dahil
5
Toptan Satın Al
Miktar | Birim Fiyat | Per Paket |
---|---|---|
5 - 20 | 65,532 TL | 327,66 TL |
25 - 95 | 58,05 TL | 290,25 TL |
100+ | 51,60 TL | 258,00 TL |
Teknik Belgeler
Özellikler
Bellek Boyutu
16kbit
Düzen
2K x 8 bit
Arabirim Tipi
Seri 2 Kablo, Seri I2C
Montaj Tipi
Yüzeye Monte
Paket Tipi
SOIC
Pim Sayısı
8
Boyutlar
4.97 x 3.98 x 1.48mm
Maksimum Çalışma Besleme Gerilimi
5,5 V
Maksimum Çalışma Sıcaklığı
+85°C
Kelime Sayısı
2k
Minimum Çalışma Sıcaklığı
-40°C
Minimum Çalışma Besleme Gerilimi
4,5 V
Kelime başına Bit Sayısı
8bit
Ürün Ayrıntıları
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.