ON Semiconductor NGTB30N120FL2WG IGBT, 1200 V, 60 A, 3-Pinli TO-247
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Özellikler
Marka
ON SemiconductorMaksimum Sürekli Kollektör Akımı
60 A
Maksimum Kollektör Emitör Gerilimi
1200 V
Maksimum Kapı Emitör Gerilimi
±20V
Maksimum Güç Kaybı
452 W
Paket Tipi
TO-247
Montaj Tipi
Açık Delik
İletken Tipi
N
Pim Sayısı
3
Anahtarlama Hızı
1MHz
Transistör Yapılandırması
Tek
Boyutlar
16.25 x 5.3 x 21.4mm
Minimum Çalışma Sıcaklığı
-55°C
Maksimum Çalışma Sıcaklığı
+175°C
Menşe
China
Ürün Ayrıntıları
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stok bilgileri geçici olarak kullanılamıyor.
Ayrıntılı bilgi için iletşime geçiniz
Teklif İsteyiniz
30
Teklif İsteyiniz
30
Ideate. Create. Collaborate
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Teknik Belgeler
Özellikler
Marka
ON SemiconductorMaksimum Sürekli Kollektör Akımı
60 A
Maksimum Kollektör Emitör Gerilimi
1200 V
Maksimum Kapı Emitör Gerilimi
±20V
Maksimum Güç Kaybı
452 W
Paket Tipi
TO-247
Montaj Tipi
Açık Delik
İletken Tipi
N
Pim Sayısı
3
Anahtarlama Hızı
1MHz
Transistör Yapılandırması
Tek
Boyutlar
16.25 x 5.3 x 21.4mm
Minimum Çalışma Sıcaklığı
-55°C
Maksimum Çalışma Sıcaklığı
+175°C
Menşe
China
Ürün Ayrıntıları
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products