onsemi PowerTrench Dual N/P-Channel-Channel MOSFET, 7.3 A, 8.6 A, 30 V, 8-Pin SOIC FDS8858CZ

RS Stok Numarası: 671-0719PMarka: onsemiÜretici Parça Numarası: FDS8858CZ
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Teknik Belgeler

Özellikler

Marka

onsemi

İletken Tipi

N, P

Maksimum Sürekli Tahliye Akımı

7,3 A, 8,6 A

Maksimum Tahliye Kaynağı Gerilimi

30 V

Series

PowerTrench

Paket Tipi

SOIC

Montaj Tipi

Yüzeye Monte

Pim Sayısı

8

Maksimum Tahliye Kaynağı Direnci

17 mΩ, 21 mΩ

Kanal Modu

Artırma

Minimum Kapı Eşiği Gerilimi

1V

Maksimum Güç Kaybı

1,6 W

Transistör Yapılandırması

Yalıtılmış

Maksimum Kapı Kaynak Gerilimi

-25 V, -20 V, +20 V, +25 V

Vgs'de Tipik Kapak Şarjı

10 V'de 17 nC, 10 V'de 33 nC

Genişlik

4mm

Transistör Malzemesi

Si

Yonga Başına Eleman Sayısı

2

Uzunluk

5mm

Maksimum Çalışma Sıcaklığı

+150°C

Minimum Çalışma Sıcaklığı

-55°C

Yükseklik

1.5mm

Ürün Ayrıntıları

PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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Stok bilgileri geçici olarak kullanılamıyor.

2.446,20 TL

48,924 TL Each (Supplied on a Reel) (KDV Hariç)

2.935,44 TL

58,709 TL Each (Supplied on a Reel) KDV Dahil

onsemi PowerTrench Dual N/P-Channel-Channel MOSFET, 7.3 A, 8.6 A, 30 V, 8-Pin SOIC FDS8858CZ
Paketlenme türü seçiniz
sticker-359

2.446,20 TL

48,924 TL Each (Supplied on a Reel) (KDV Hariç)

2.935,44 TL

58,709 TL Each (Supplied on a Reel) KDV Dahil

onsemi PowerTrench Dual N/P-Channel-Channel MOSFET, 7.3 A, 8.6 A, 30 V, 8-Pin SOIC FDS8858CZ
Stok bilgileri geçici olarak kullanılamıyor.
Paketlenme türü seçiniz
sticker-359

Stok bilgileri geçici olarak kullanılamıyor.

Ayrıntılı bilgi için iletşime geçiniz

MiktarBirim FiyatPer Makara
50 - 9548,924 TL244,62 TL
100 - 49542,336 TL211,68 TL
500 - 99537,26 TL186,30 TL
1000+33,912 TL169,56 TL

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Teknik Belgeler

Özellikler

Marka

onsemi

İletken Tipi

N, P

Maksimum Sürekli Tahliye Akımı

7,3 A, 8,6 A

Maksimum Tahliye Kaynağı Gerilimi

30 V

Series

PowerTrench

Paket Tipi

SOIC

Montaj Tipi

Yüzeye Monte

Pim Sayısı

8

Maksimum Tahliye Kaynağı Direnci

17 mΩ, 21 mΩ

Kanal Modu

Artırma

Minimum Kapı Eşiği Gerilimi

1V

Maksimum Güç Kaybı

1,6 W

Transistör Yapılandırması

Yalıtılmış

Maksimum Kapı Kaynak Gerilimi

-25 V, -20 V, +20 V, +25 V

Vgs'de Tipik Kapak Şarjı

10 V'de 17 nC, 10 V'de 33 nC

Genişlik

4mm

Transistör Malzemesi

Si

Yonga Başına Eleman Sayısı

2

Uzunluk

5mm

Maksimum Çalışma Sıcaklığı

+150°C

Minimum Çalışma Sıcaklığı

-55°C

Yükseklik

1.5mm

Ürün Ayrıntıları

PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more