Teknik Belgeler
Özellikler
Uç 1 Cinsiyeti
Dişi
Uç 2 Tipi
DIP
Uç 2 Cinsiyeti
Erkek
Uç 2 Kontakların Sayısı
8
Uç 1 Tipi
QFN
Uç 1 Kontakların Sayısı
8
Gövde Yönü
Düz
Uç 2
8 Pimli Erkek DIP
Hatve
1.27 mm, 2.54 mm
Uç 1
8 Pimli Dişi QFN
Montaj Tipi
Açık Delik
Marka
WinslowMenşe
United Kingdom
Ürün Ayrıntıları
Automotive Ignition IGBT, Fairchild Semiconductor
These EcoSPARK IGBT devices are optimised for driving automotive ignition coils. They have been stress tested and meet the AEC-Q101 standard.
Standards
AEC-Q101
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Stok bilgileri geçici olarak kullanılamıyor.
Ayrıntılı bilgi için iletşime geçiniz
264,708 TL
Each (In a Pack of 5) KDV Hariç
317,65 TL
Each (In a Pack of 5) KDV Dahil
5
![sticker-359](https://cms.rsdelivers.com/repository-v1/yeniiyifiyat.gif)
264,708 TL
Each (In a Pack of 5) KDV Hariç
317,65 TL
Each (In a Pack of 5) KDV Dahil
5
![sticker-359](https://cms.rsdelivers.com/repository-v1/yeniiyifiyat.gif)
Toptan Satın Al
Miktar | Birim Fiyat | Per Paket |
---|---|---|
5 - 120 | 264,708 TL | 1.323,54 TL |
125 - 370 | 238,22 TL | 1.191,10 TL |
375 - 995 | 211,474 TL | 1.057,37 TL |
1000 - 1995 | 185,33 TL | 926,65 TL |
2000+ | 172,086 TL | 860,43 TL |
Teknik Belgeler
Özellikler
Uç 1 Cinsiyeti
Dişi
Uç 2 Tipi
DIP
Uç 2 Cinsiyeti
Erkek
Uç 2 Kontakların Sayısı
8
Uç 1 Tipi
QFN
Uç 1 Kontakların Sayısı
8
Gövde Yönü
Düz
Uç 2
8 Pimli Erkek DIP
Hatve
1.27 mm, 2.54 mm
Uç 1
8 Pimli Dişi QFN
Montaj Tipi
Açık Delik
Marka
WinslowMenşe
United Kingdom
Ürün Ayrıntıları
Automotive Ignition IGBT, Fairchild Semiconductor
These EcoSPARK IGBT devices are optimised for driving automotive ignition coils. They have been stress tested and meet the AEC-Q101 standard.
Standards
AEC-Q101
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.