Infineon AUIRFZ44Z N-Kanallı Si MOSFET Transistör, 51 A, 55 V, 3-Pinli TO-220AB
Teknik Belgeler
Özellikler
Marka
Infineonİletken Tipi
N
Maksimum Sürekli Tahliye Akımı
51 A
Maksimum Tahliye Kaynağı Gerilimi
55 V
Paket Tipi
TO-220AB
Montaj Tipi
Açık Delik
Pim Sayısı
3
Maksimum Tahliye Kaynağı Direnci
13.9 mΩ
Kanal Modu
Artırma
Maksimum Kapı Eşiği Gerilimi
4V
Minimum Kapı Eşiği Gerilimi
2V
Maksimum Güç Kaybı
80 W
Transistör Yapılandırması
Tek
Maksimum Kapı Kaynak Gerilimi
-20 V, +20 V
Vgs'de Tipik Kapak Şarjı
10 V'de 29 nC
Yonga Başına Eleman Sayısı
1
Maksimum Çalışma Sıcaklığı
+175°C
Uzunluk
10.67mm
Genişlik
4.83mm
Transistör Malzemesi
Si
Series
HEXFET
Minimum Çalışma Sıcaklığı
-55°C
Yükseklik
16.51mm
Ürün Ayrıntıları
Automotive N-Channel Power MOSFET, Infineon
Infineon's comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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46,01 TL
23,004 TL Each (In a Pack of 2) (KDV Hariç)
55,21 TL
27,605 TL Each (In a Pack of 2) KDV Dahil
Standart
2
46,01 TL
23,004 TL Each (In a Pack of 2) (KDV Hariç)
55,21 TL
27,605 TL Each (In a Pack of 2) KDV Dahil
Standart
2
Stok bilgileri geçici olarak kullanılamıyor.
Ayrıntılı bilgi için iletşime geçiniz
Ideate. Create. Collaborate
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Teknik Belgeler
Özellikler
Marka
Infineonİletken Tipi
N
Maksimum Sürekli Tahliye Akımı
51 A
Maksimum Tahliye Kaynağı Gerilimi
55 V
Paket Tipi
TO-220AB
Montaj Tipi
Açık Delik
Pim Sayısı
3
Maksimum Tahliye Kaynağı Direnci
13.9 mΩ
Kanal Modu
Artırma
Maksimum Kapı Eşiği Gerilimi
4V
Minimum Kapı Eşiği Gerilimi
2V
Maksimum Güç Kaybı
80 W
Transistör Yapılandırması
Tek
Maksimum Kapı Kaynak Gerilimi
-20 V, +20 V
Vgs'de Tipik Kapak Şarjı
10 V'de 29 nC
Yonga Başına Eleman Sayısı
1
Maksimum Çalışma Sıcaklığı
+175°C
Uzunluk
10.67mm
Genişlik
4.83mm
Transistör Malzemesi
Si
Series
HEXFET
Minimum Çalışma Sıcaklığı
-55°C
Yükseklik
16.51mm
Ürün Ayrıntıları
Automotive N-Channel Power MOSFET, Infineon
Infineon's comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products