Infineon IHW30N135R3FKSA1 IGBT, 1350 V, 30 A, 3-Pinli TO-247
Teknik Belgeler
Özellikler
Marka
InfineonMaksimum Sürekli Kollektör Akımı
30 A
Maksimum Kollektör Emitör Gerilimi
1350 V
Maksimum Kapı Emitör Gerilimi
±20V
Maksimum Güç Kaybı
349 W
Paket Tipi
TO-247
Montaj Tipi
Açık Delik
İletken Tipi
N
Pim Sayısı
3
Transistör Yapılandırması
Tek
Boyutlar
16.13 x 5.21 x 21.1mm
Minimum Çalışma Sıcaklığı
-40°C
Kapı Kapasitansı
2066pF
Maksimum Çalışma Sıcaklığı
+175°C
Ürün Ayrıntıları
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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662,74 TL
220,914 TL Each (In a Pack of 3) (KDV Hariç)
795,29 TL
265,097 TL Each (In a Pack of 3) KDV Dahil
Standart
3
662,74 TL
220,914 TL Each (In a Pack of 3) (KDV Hariç)
795,29 TL
265,097 TL Each (In a Pack of 3) KDV Dahil
Standart
3
Stok bilgileri geçici olarak kullanılamıyor.
Ayrıntılı bilgi için iletşime geçiniz
| Miktar | Birim Fiyat | Per Paket |
|---|---|---|
| 3 - 12 | 220,914 TL | 662,74 TL |
| 15 - 27 | 198,774 TL | 596,32 TL |
| 30 - 72 | 185,652 TL | 556,96 TL |
| 75+ | 172,314 TL | 516,94 TL |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Teknik Belgeler
Özellikler
Marka
InfineonMaksimum Sürekli Kollektör Akımı
30 A
Maksimum Kollektör Emitör Gerilimi
1350 V
Maksimum Kapı Emitör Gerilimi
±20V
Maksimum Güç Kaybı
349 W
Paket Tipi
TO-247
Montaj Tipi
Açık Delik
İletken Tipi
N
Pim Sayısı
3
Transistör Yapılandırması
Tek
Boyutlar
16.13 x 5.21 x 21.1mm
Minimum Çalışma Sıcaklığı
-40°C
Kapı Kapasitansı
2066pF
Maksimum Çalışma Sıcaklığı
+175°C
Ürün Ayrıntıları
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products