IKW15N120H3 Infineon IGBT, 30 A, 1200 V, 3-Pinli TO-247
Teknik Belgeler
Özellikler
Marka
InfineonMaksimum Sürekli Kollektör Akımı
30 A
Maksimum Kollektör Emitör Gerilimi
1200 V
Maksimum Kapı Emitör Gerilimi
±20V
Maksimum Güç Kaybı
217 W
Paket Tipi
TO-247
Montaj Tipi
Açık Delik
İletken Tipi
N
Pim Sayısı
3
Transistör Yapılandırması
Tek
Boyutlar
16.03 x 5.16 x 21.1mm
Minimum Çalışma Sıcaklığı
-40°C
Maksimum Çalışma Sıcaklığı
+175°C
Ürün Ayrıntıları
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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473,15 TL
236,574 TL Each (In a Pack of 2) (KDV Hariç)
567,78 TL
283,889 TL Each (In a Pack of 2) KDV Dahil
Standart
2
473,15 TL
236,574 TL Each (In a Pack of 2) (KDV Hariç)
567,78 TL
283,889 TL Each (In a Pack of 2) KDV Dahil
Standart
2
Stok bilgileri geçici olarak kullanılamıyor.
Ayrıntılı bilgi için iletşime geçiniz
| Miktar | Birim Fiyat | Per Paket |
|---|---|---|
| 2 - 18 | 236,574 TL | 473,15 TL |
| 20 - 48 | 210,654 TL | 421,31 TL |
| 50 - 98 | 196,614 TL | 393,23 TL |
| 100 - 198 | 182,304 TL | 364,61 TL |
| 200+ | 170,154 TL | 340,31 TL |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Teknik Belgeler
Özellikler
Marka
InfineonMaksimum Sürekli Kollektör Akımı
30 A
Maksimum Kollektör Emitör Gerilimi
1200 V
Maksimum Kapı Emitör Gerilimi
±20V
Maksimum Güç Kaybı
217 W
Paket Tipi
TO-247
Montaj Tipi
Açık Delik
İletken Tipi
N
Pim Sayısı
3
Transistör Yapılandırması
Tek
Boyutlar
16.03 x 5.16 x 21.1mm
Minimum Çalışma Sıcaklığı
-40°C
Maksimum Çalışma Sıcaklığı
+175°C
Ürün Ayrıntıları
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products