Infineon IKW25N120H3FKSA1 IGBT, 1200 V, 50 A, 3-Pinli TO-247
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Özellikler
Marka
InfineonMaksimum Sürekli Kollektör Akımı
50 A
Maksimum Kollektör Emitör Gerilimi
1200 V
Maksimum Kapı Emitör Gerilimi
±20V
Maksimum Güç Kaybı
326 W
Paket Tipi
TO-247
Montaj Tipi
Açık Delik
İletken Tipi
N
Pim Sayısı
3
Transistör Yapılandırması
Tek
Boyutlar
16.13 x 5.21 x 21.1mm
Maksimum Çalışma Sıcaklığı
+175°C
Enerji Değeri
4.3mJ
Minimum Çalışma Sıcaklığı
-40°C
Kapı Kapasitansı
1430pF
Menşe
Malaysia
Ürün Ayrıntıları
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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6.183,54 TL
206,118 TL Each (In a Tube of 30) (KDV Hariç)
7.420,25 TL
247,342 TL Each (In a Tube of 30) KDV Dahil
30
6.183,54 TL
206,118 TL Each (In a Tube of 30) (KDV Hariç)
7.420,25 TL
247,342 TL Each (In a Tube of 30) KDV Dahil
30
Stok bilgileri geçici olarak kullanılamıyor.
Ayrıntılı bilgi için iletşime geçiniz
| Miktar | Birim Fiyat | Per Tüp |
|---|---|---|
| 30 - 30 | 206,118 TL | 6.183,54 TL |
| 60 - 120 | 195,804 TL | 5.874,12 TL |
| 150+ | 187,542 TL | 5.626,26 TL |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Teknik Belgeler
Özellikler
Marka
InfineonMaksimum Sürekli Kollektör Akımı
50 A
Maksimum Kollektör Emitör Gerilimi
1200 V
Maksimum Kapı Emitör Gerilimi
±20V
Maksimum Güç Kaybı
326 W
Paket Tipi
TO-247
Montaj Tipi
Açık Delik
İletken Tipi
N
Pim Sayısı
3
Transistör Yapılandırması
Tek
Boyutlar
16.13 x 5.21 x 21.1mm
Maksimum Çalışma Sıcaklığı
+175°C
Enerji Değeri
4.3mJ
Minimum Çalışma Sıcaklığı
-40°C
Kapı Kapasitansı
1430pF
Menşe
Malaysia
Ürün Ayrıntıları
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products