ISL9V3040S3ST ON Semiconductor IGBT, 21 A, 450 V, 3-Pinli D2PAK (TO-263)
Teknik Belgeler
Özellikler
Maksimum Sürekli Kollektör Akımı
21 A
Maksimum Kollektör Emitör Gerilimi
450 V
Maksimum Kapı Emitör Gerilimi
±14V
Maksimum Güç Kaybı
150 W
Paket Tipi
D2PAK (TO-263)
Montaj Tipi
Yüzeye Monte
İletken Tipi
N
Pim Sayısı
3
Transistör Yapılandırması
Tek
Boyutlar
10.67 x 9.65 x 4.83mm
Minimum Çalışma Sıcaklığı
-40°C
Maksimum Çalışma Sıcaklığı
+175°C
Ürün Ayrıntıları
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
548,91 TL
109,782 TL Each (In a Pack of 5) (KDV Hariç)
658,69 TL
131,738 TL Each (In a Pack of 5) KDV Dahil
5
548,91 TL
109,782 TL Each (In a Pack of 5) (KDV Hariç)
658,69 TL
131,738 TL Each (In a Pack of 5) KDV Dahil
Stok bilgileri geçici olarak kullanılamıyor.
5
Stok bilgileri geçici olarak kullanılamıyor.
| Miktar | Birim Fiyat | Per Paket |
|---|---|---|
| 5 - 5 | 109,782 TL | 548,91 TL |
| 10 - 95 | 93,822 TL | 469,11 TL |
| 100 - 245 | 74,10 TL | 370,50 TL |
| 250 - 495 | 72,162 TL | 360,81 TL |
| 500+ | 70,452 TL | 352,26 TL |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Teknik Belgeler
Özellikler
Maksimum Sürekli Kollektör Akımı
21 A
Maksimum Kollektör Emitör Gerilimi
450 V
Maksimum Kapı Emitör Gerilimi
±14V
Maksimum Güç Kaybı
150 W
Paket Tipi
D2PAK (TO-263)
Montaj Tipi
Yüzeye Monte
İletken Tipi
N
Pim Sayısı
3
Transistör Yapılandırması
Tek
Boyutlar
10.67 x 9.65 x 4.83mm
Minimum Çalışma Sıcaklığı
-40°C
Maksimum Çalışma Sıcaklığı
+175°C
Ürün Ayrıntıları
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products