Teknik Belgeler
Özellikler
İletken Tipi
N
Maksimum Sürekli Tahliye Akımı
66 A
Maksimum Tahliye Kaynağı Gerilimi
55 V
Paket Tipi
TO-220AB
Montaj Tipi
Açık Delik
Pim Sayısı
3
Maksimum Tahliye Kaynağı Direnci
16 mΩ
Kanal Modu
Artırma
Maksimum Güç Kaybı
150 W
Maksimum Kapı Kaynak Gerilimi
-20 V, +20 V
Vgs'de Tipik Kapak Şarjı
70 nC @ 20 V
Yonga Başına Eleman Sayısı
1
Maksimum Çalışma Sıcaklığı
+175°C
Uzunluk
10.67mm
Genişlik
4.83mm
Yükseklik
9.65mm
Minimum Çalışma Sıcaklığı
-55°C
Ürün Ayrıntıları
UltraFET® MOSFET, Fairchild Semiconductor
UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Teklif İsteyiniz
1

Teklif İsteyiniz
1

Stok bilgileri geçici olarak kullanılamıyor.
Ayrıntılı bilgi için iletşime geçiniz
Teknik Belgeler
Özellikler
İletken Tipi
N
Maksimum Sürekli Tahliye Akımı
66 A
Maksimum Tahliye Kaynağı Gerilimi
55 V
Paket Tipi
TO-220AB
Montaj Tipi
Açık Delik
Pim Sayısı
3
Maksimum Tahliye Kaynağı Direnci
16 mΩ
Kanal Modu
Artırma
Maksimum Güç Kaybı
150 W
Maksimum Kapı Kaynak Gerilimi
-20 V, +20 V
Vgs'de Tipik Kapak Şarjı
70 nC @ 20 V
Yonga Başına Eleman Sayısı
1
Maksimum Çalışma Sıcaklığı
+175°C
Uzunluk
10.67mm
Genişlik
4.83mm
Yükseklik
9.65mm
Minimum Çalışma Sıcaklığı
-55°C
Ürün Ayrıntıları
UltraFET® MOSFET, Fairchild Semiconductor
UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.