Infineon IDH08G120C5XKSA1, SiC Schottky Diyot, 1200V, 22,8A, 2+Tab-Pinli TO-220

RS Stok Numarası: 133-8555Marka: InfineonÜretici Parça Numarası: IDH08G120C5XKSA1
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Teknik Belgeler

Özellikler

Montaj Tipi

Açık Delik

Paket Tipi

TO-220

Maksimum Sürekli İleri Akım

22.8A

Tepe Ters Tekrarlayan Gerilim

1200V

Diyot Konfigürasyonu

Tek

Redresör Tipi

Anahtarlama

Diyot Tipi

SiC Schottky

Pim Sayısı

2 + Tab

Maksimum İleri Gerilim Düşümü

2.85V

Yonga Başına Eleman Sayısı

1

Diyot Teknolojisi

SiC Schottky

Tepe Tekrarlamayan İleri Ani Akım

70A

Menşe

Malaysia

Ürün Ayrıntıları

thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon

The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.

Diodes and Rectifiers, Infineon

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Stok bilgileri geçici olarak kullanılamıyor.

Ayrıntılı bilgi için iletşime geçiniz

Stok bilgileri geçici olarak kullanılamıyor.

88,548 TL

Each (In a Tube of 500) KDV Hariç

106,258 TL

Each (In a Tube of 500) KDV Dahil

Infineon IDH08G120C5XKSA1, SiC Schottky Diyot, 1200V, 22,8A, 2+Tab-Pinli TO-220

88,548 TL

Each (In a Tube of 500) KDV Hariç

106,258 TL

Each (In a Tube of 500) KDV Dahil

Infineon IDH08G120C5XKSA1, SiC Schottky Diyot, 1200V, 22,8A, 2+Tab-Pinli TO-220
Stok bilgileri geçici olarak kullanılamıyor.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Teknik Belgeler

Özellikler

Montaj Tipi

Açık Delik

Paket Tipi

TO-220

Maksimum Sürekli İleri Akım

22.8A

Tepe Ters Tekrarlayan Gerilim

1200V

Diyot Konfigürasyonu

Tek

Redresör Tipi

Anahtarlama

Diyot Tipi

SiC Schottky

Pim Sayısı

2 + Tab

Maksimum İleri Gerilim Düşümü

2.85V

Yonga Başına Eleman Sayısı

1

Diyot Teknolojisi

SiC Schottky

Tepe Tekrarlamayan İleri Ani Akım

70A

Menşe

Malaysia

Ürün Ayrıntıları

thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon

The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.

Diodes and Rectifiers, Infineon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more