Semikron SKM400GAL12E4 IGBT Modülü SEMITRANS3, maks. 618 A, 1200 V, Panele Monte
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SemikronMaksimum Sürekli Kollektör Akımı
618 A
Maksimum Kollektör Emitör Gerilimi
1200 V
Maksimum Kapı Emitör Gerilimi
±20V
Yapılandırma
Tek
Paket Tipi
SEMITRANS3
Montaj Tipi
Panel Montajı
İletken Tipi
N
Pim Sayısı
5
Transistör Yapılandırması
Tek
Boyutlar
106.4 x 61.4 x 30.5mm
Minimum Çalışma Sıcaklığı
-40°C
Maksimum Çalışma Sıcaklığı
+175°C
Ürün Ayrıntıları
Single IGBT Modules
SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Teklif İsteyiniz
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Teklif İsteyiniz
1
Ideate. Create. Collaborate
JOIN FOR FREE
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Teknik Belgeler
Özellikler
Marka
SemikronMaksimum Sürekli Kollektör Akımı
618 A
Maksimum Kollektör Emitör Gerilimi
1200 V
Maksimum Kapı Emitör Gerilimi
±20V
Yapılandırma
Tek
Paket Tipi
SEMITRANS3
Montaj Tipi
Panel Montajı
İletken Tipi
N
Pim Sayısı
5
Transistör Yapılandırması
Tek
Boyutlar
106.4 x 61.4 x 30.5mm
Minimum Çalışma Sıcaklığı
-40°C
Maksimum Çalışma Sıcaklığı
+175°C
Ürün Ayrıntıları
Single IGBT Modules
SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products