FM16W08-SG Paralel FRAM Bellek, 64Kbit, 70ns, 2,7 → 5,5 V 28-Pinli SOIC
Teknik Belgeler
Özellikler
Bellek Boyutu
64kbit
Düzen
8K x 8 bit
Arabirim Tipi
Paralel
Veri Yolu Genişliği
8bit
Maksimum Rastgele Erişim Süresi
70ns
Montaj Tipi
Yüzeye Monte
Paket Tipi
SOIC
Pim Sayısı
28
Boyutlar
18.11 x 7.62 x 2.37mm
Maksimum Çalışma Besleme Gerilimi
5,5 V
Maksimum Çalışma Sıcaklığı
+85°C
Kelime Sayısı
8K
Minimum Çalışma Sıcaklığı
-40°C
Minimum Çalışma Besleme Gerilimi
2,7 V
Kelime başına Bit Sayısı
8bit
Ürün Ayrıntıları
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
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Teknik Belgeler
Özellikler
Bellek Boyutu
64kbit
Düzen
8K x 8 bit
Arabirim Tipi
Paralel
Veri Yolu Genişliği
8bit
Maksimum Rastgele Erişim Süresi
70ns
Montaj Tipi
Yüzeye Monte
Paket Tipi
SOIC
Pim Sayısı
28
Boyutlar
18.11 x 7.62 x 2.37mm
Maksimum Çalışma Besleme Gerilimi
5,5 V
Maksimum Çalışma Sıcaklığı
+85°C
Kelime Sayısı
8K
Minimum Çalışma Sıcaklığı
-40°C
Minimum Çalışma Besleme Gerilimi
2,7 V
Kelime başına Bit Sayısı
8bit
Ürün Ayrıntıları
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products