N-Channel MOSFET, 500 mA, 60 V, 3-Pin TO-92 Fairchild BS170_D26Z
Teknik Belgeler
Özellikler
İletken Tipi
N
Maksimum Sürekli Tahliye Akımı
500 mA
Maksimum Tahliye Kaynağı Gerilimi
60 V
Paket Tipi
TO-92
Montaj Tipi
Açık Delik
Pim Sayısı
3
Maksimum Tahliye Kaynağı Direnci
5 Ω
Kanal Modu
Artırma
Minimum Kapı Eşiği Gerilimi
0.8V
Maksimum Güç Kaybı
830 mW
Transistör Yapılandırması
Tek
Maksimum Kapı Kaynak Gerilimi
-20 V, +20 V
Yonga Başına Eleman Sayısı
1
Maksimum Çalışma Sıcaklığı
+150°C
Uzunluk
5.2mm
Genişlik
4.19mm
Transistör Malzemesi
Si
Minimum Çalışma Sıcaklığı
-55°C
PRICED TO CLEAR
Yes
Yükseklik
5.33mm
Ürün Ayrıntıları
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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Stok bilgileri geçici olarak kullanılamıyor.
Ayrıntılı bilgi için iletşime geçiniz
Teklif İsteyiniz
Standart
50
Teklif İsteyiniz
Standart
50
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Teknik Belgeler
Özellikler
İletken Tipi
N
Maksimum Sürekli Tahliye Akımı
500 mA
Maksimum Tahliye Kaynağı Gerilimi
60 V
Paket Tipi
TO-92
Montaj Tipi
Açık Delik
Pim Sayısı
3
Maksimum Tahliye Kaynağı Direnci
5 Ω
Kanal Modu
Artırma
Minimum Kapı Eşiği Gerilimi
0.8V
Maksimum Güç Kaybı
830 mW
Transistör Yapılandırması
Tek
Maksimum Kapı Kaynak Gerilimi
-20 V, +20 V
Yonga Başına Eleman Sayısı
1
Maksimum Çalışma Sıcaklığı
+150°C
Uzunluk
5.2mm
Genişlik
4.19mm
Transistör Malzemesi
Si
Minimum Çalışma Sıcaklığı
-55°C
PRICED TO CLEAR
Yes
Yükseklik
5.33mm
Ürün Ayrıntıları
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products