Teknik Belgeler
Özellikler
İletken Tipi
N
Maksimum Sürekli Tahliye Akımı
28 A
Maksimum Tahliye Kaynağı Gerilimi
500 V
Paket Tipi
TO-3PN
Montaj Tipi
Açık Delik
Pim Sayısı
3
Maksimum Tahliye Kaynağı Direnci
160 mΩ
Kanal Modu
Artırma
Maksimum Güç Kaybı
310 W
Maksimum Kapı Kaynak Gerilimi
-30 V, +30 V
Vgs'de Tipik Kapak Şarjı
10 V'de 110 nC
Yonga Başına Eleman Sayısı
1
Maksimum Çalışma Sıcaklığı
+150°C
Uzunluk
15.8mm
Genişlik
5mm
Minimum Çalışma Sıcaklığı
-55°C
Yükseklik
18.9mm
Ürün Ayrıntıları
QFET® N-Channel MOSFET, 11A to 30A, Fairchild Semiconductor
Fairchild Semiconductors new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Teklif İsteyiniz
Üretime Uygun Paketleme (Tüp)
1

Teklif İsteyiniz
Stok bilgileri geçici olarak kullanılamıyor.
Üretime Uygun Paketleme (Tüp)
1

Stok bilgileri geçici olarak kullanılamıyor.
Teknik Belgeler
Özellikler
İletken Tipi
N
Maksimum Sürekli Tahliye Akımı
28 A
Maksimum Tahliye Kaynağı Gerilimi
500 V
Paket Tipi
TO-3PN
Montaj Tipi
Açık Delik
Pim Sayısı
3
Maksimum Tahliye Kaynağı Direnci
160 mΩ
Kanal Modu
Artırma
Maksimum Güç Kaybı
310 W
Maksimum Kapı Kaynak Gerilimi
-30 V, +30 V
Vgs'de Tipik Kapak Şarjı
10 V'de 110 nC
Yonga Başına Eleman Sayısı
1
Maksimum Çalışma Sıcaklığı
+150°C
Uzunluk
15.8mm
Genişlik
5mm
Minimum Çalışma Sıcaklığı
-55°C
Yükseklik
18.9mm
Ürün Ayrıntıları
QFET® N-Channel MOSFET, 11A to 30A, Fairchild Semiconductor
Fairchild Semiconductors new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.