HGTG12N60A4D Fairchild IGBT, 54 A, 600 V, 3-Pinli TO-247

RS Stok Numarası: 671-5420Marka: Fairchild SemiconductorÜretici Parça Numarası: HGTG12N60A4D
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Teknik Belgeler

Özellikler

Maksimum Sürekli Kollektör Akımı

54 A

Maksimum Kollektör Emitör Gerilimi

600 V

Maksimum Kapı Emitör Gerilimi

±20V

Paket Tipi

TO-247

Montaj Tipi

Açık Delik

İletken Tipi

N

Pim Sayısı

3

Boyutlar

15.87 x 4.82 x 20.82mm

Minimum Çalışma Sıcaklığı

-55°C

Maksimum Çalışma Sıcaklığı

+150°C

Ürün Ayrıntıları

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Teklif İsteyiniz

HGTG12N60A4D Fairchild IGBT, 54 A, 600 V, 3-Pinli TO-247
Paketlenme türü seçiniz
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Teklif İsteyiniz

HGTG12N60A4D Fairchild IGBT, 54 A, 600 V, 3-Pinli TO-247

Stok bilgileri geçici olarak kullanılamıyor.

Paketlenme türü seçiniz
sticker-359

Stok bilgileri geçici olarak kullanılamıyor.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Teknik Belgeler

Özellikler

Maksimum Sürekli Kollektör Akımı

54 A

Maksimum Kollektör Emitör Gerilimi

600 V

Maksimum Kapı Emitör Gerilimi

±20V

Paket Tipi

TO-247

Montaj Tipi

Açık Delik

İletken Tipi

N

Pim Sayısı

3

Boyutlar

15.87 x 4.82 x 20.82mm

Minimum Çalışma Sıcaklığı

-55°C

Maksimum Çalışma Sıcaklığı

+150°C

Ürün Ayrıntıları

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more