Fairchild IRF610 N-Kanallı MOSFET Transistörü, 3,3 A, 200 V, 3-Pinli TO-220AB
Teknik Belgeler
Özellikler
İletken Tipi
N
Maksimum Sürekli Tahliye Akımı
3,3 A
Maksimum Tahliye Kaynağı Gerilimi
200 V
Paket Tipi
TO-220AB
Montaj Tipi
Açık Delik
Pim Sayısı
3
Maksimum Tahliye Kaynağı Direnci
1.5 Ω
Kanal Modu
Artırma
Maksimum Güç Kaybı
43 W
Maksimum Kapı Kaynak Gerilimi
-20 V, +20 V
Genişlik
4.83mm
Vgs'de Tipik Kapak Şarjı
10 V'de 5,3 nC
Yonga Başına Eleman Sayısı
1
Maksimum Çalışma Sıcaklığı
+150°C
Uzunluk
10.67mm
Minimum Çalışma Sıcaklığı
-55°C
Yükseklik
9.4mm
Ürün Ayrıntıları
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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Teklif İsteyiniz
Standart
1
Teklif İsteyiniz
Stok bilgileri geçici olarak kullanılamıyor.
Standart
1
Stok bilgileri geçici olarak kullanılamıyor.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Teknik Belgeler
Özellikler
İletken Tipi
N
Maksimum Sürekli Tahliye Akımı
3,3 A
Maksimum Tahliye Kaynağı Gerilimi
200 V
Paket Tipi
TO-220AB
Montaj Tipi
Açık Delik
Pim Sayısı
3
Maksimum Tahliye Kaynağı Direnci
1.5 Ω
Kanal Modu
Artırma
Maksimum Güç Kaybı
43 W
Maksimum Kapı Kaynak Gerilimi
-20 V, +20 V
Genişlik
4.83mm
Vgs'de Tipik Kapak Şarjı
10 V'de 5,3 nC
Yonga Başına Eleman Sayısı
1
Maksimum Çalışma Sıcaklığı
+150°C
Uzunluk
10.67mm
Minimum Çalışma Sıcaklığı
-55°C
Yükseklik
9.4mm
Ürün Ayrıntıları
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products