ISL9V3040P3 ON Semiconductor IGBT, 21 A, 450 V, 3-Pinli TO-220AB
Teknik Belgeler
Özellikler
Maksimum Sürekli Kollektör Akımı
21 A
Maksimum Kollektör Emitör Gerilimi
450 V
Maksimum Kapı Emitör Gerilimi
±14V
Maksimum Güç Kaybı
150 W
Paket Tipi
TO-220AB
Montaj Tipi
Açık Delik
İletken Tipi
N
Pim Sayısı
3
Transistör Yapılandırması
Tek
Boyutlar
10.67 x 4.7 x 16.3mm
Minimum Çalışma Sıcaklığı
-40°C
Maksimum Çalışma Sıcaklığı
+175°C
Ürün Ayrıntıları
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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745,88 TL
149,176 TL Each (In a Pack of 5) (KDV Hariç)
895,06 TL
179,011 TL Each (In a Pack of 5) KDV Dahil
Standart
5
745,88 TL
149,176 TL Each (In a Pack of 5) (KDV Hariç)
895,06 TL
179,011 TL Each (In a Pack of 5) KDV Dahil
Stok bilgileri geçici olarak kullanılamıyor.
Standart
5
Stok bilgileri geçici olarak kullanılamıyor.
| Miktar | Birim Fiyat | Per Paket |
|---|---|---|
| 5 - 5 | 149,176 TL | 745,88 TL |
| 10 - 95 | 120,176 TL | 600,88 TL |
| 100 - 495 | 98,716 TL | 493,58 TL |
| 500 - 995 | 83,172 TL | 415,86 TL |
| 1000+ | 73,196 TL | 365,98 TL |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Teknik Belgeler
Özellikler
Maksimum Sürekli Kollektör Akımı
21 A
Maksimum Kollektör Emitör Gerilimi
450 V
Maksimum Kapı Emitör Gerilimi
±14V
Maksimum Güç Kaybı
150 W
Paket Tipi
TO-220AB
Montaj Tipi
Açık Delik
İletken Tipi
N
Pim Sayısı
3
Transistör Yapılandırması
Tek
Boyutlar
10.67 x 4.7 x 16.3mm
Minimum Çalışma Sıcaklığı
-40°C
Maksimum Çalışma Sıcaklığı
+175°C
Ürün Ayrıntıları
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products