ON Semiconductor ISL9V5036S3ST IGBT, 420 V, 46 A, 3-Pinli D2PAK (TO-263)
Teknik Belgeler
Özellikler
Maksimum Sürekli Kollektör Akımı
46 A
Maksimum Kollektör Emitör Gerilimi
420 V
Maksimum Kapı Emitör Gerilimi
±14V
Maksimum Güç Kaybı
250 W
Paket Tipi
D2PAK (TO-263)
Montaj Tipi
Yüzeye Monte
İletken Tipi
N
Pim Sayısı
3
Transistör Yapılandırması
Tek
Boyutlar
10.67 x 9.65 x 4.83mm
Maksimum Çalışma Sıcaklığı
+175°C
Minimum Çalışma Sıcaklığı
-40°C
Ürün Ayrıntıları
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Stok bilgileri geçici olarak kullanılamıyor.
Ayrıntılı bilgi için iletşime geçiniz
85.652,80 TL
107,066 TL Each (On a Reel of 800) (KDV Hariç)
102.783,36 TL
128,479 TL Each (On a Reel of 800) KDV Dahil
800
85.652,80 TL
107,066 TL Each (On a Reel of 800) (KDV Hariç)
102.783,36 TL
128,479 TL Each (On a Reel of 800) KDV Dahil
800
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Teknik Belgeler
Özellikler
Maksimum Sürekli Kollektör Akımı
46 A
Maksimum Kollektör Emitör Gerilimi
420 V
Maksimum Kapı Emitör Gerilimi
±14V
Maksimum Güç Kaybı
250 W
Paket Tipi
D2PAK (TO-263)
Montaj Tipi
Yüzeye Monte
İletken Tipi
N
Pim Sayısı
3
Transistör Yapılandırması
Tek
Boyutlar
10.67 x 9.65 x 4.83mm
Maksimum Çalışma Sıcaklığı
+175°C
Minimum Çalışma Sıcaklığı
-40°C
Ürün Ayrıntıları
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products