Infineon AUIRF2903ZS N-Kanallı Si MOSFET Transistör, 235 A, 30 V, 3-Pinli D2PAK (TO-263)
Teknik Belgeler
Özellikler
Marka
Infineonİletken Tipi
N
Maksimum Sürekli Tahliye Akımı
235 A
Maksimum Tahliye Kaynağı Gerilimi
30 V
Seri
HEXFET
Paket Tipi
D2PAK (TO-263)
Montaj Tipi
Yüzeye Monte
Pim Sayısı
3
Maksimum Tahliye Kaynağı Direnci
2.4 mΩ
Kanal Modu
Artırma
Maksimum Kapı Eşiği Gerilimi
4V
Minimum Kapı Eşiği Gerilimi
2V
Maksimum Güç Kaybı
231 W
Transistör Yapılandırması
Tek
Maksimum Kapı Kaynak Gerilimi
-20 V, +20 V
Genişlik
9.65mm
Yonga Başına Eleman Sayısı
1
Maksimum Çalışma Sıcaklığı
+175°C
Transistör Malzemesi
Si
Uzunluk
10.67mm
Vgs'de Tipik Kapak Şarjı
10 V'de 160 nC
Yükseklik
4.83mm
Minimum Çalışma Sıcaklığı
-55°C
Ürün Ayrıntıları
Automotive N-Channel Power MOSFET, Infineon
Infineon's comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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P.O.A.
50
P.O.A.
50
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Teknik Belgeler
Özellikler
Marka
Infineonİletken Tipi
N
Maksimum Sürekli Tahliye Akımı
235 A
Maksimum Tahliye Kaynağı Gerilimi
30 V
Seri
HEXFET
Paket Tipi
D2PAK (TO-263)
Montaj Tipi
Yüzeye Monte
Pim Sayısı
3
Maksimum Tahliye Kaynağı Direnci
2.4 mΩ
Kanal Modu
Artırma
Maksimum Kapı Eşiği Gerilimi
4V
Minimum Kapı Eşiği Gerilimi
2V
Maksimum Güç Kaybı
231 W
Transistör Yapılandırması
Tek
Maksimum Kapı Kaynak Gerilimi
-20 V, +20 V
Genişlik
9.65mm
Yonga Başına Eleman Sayısı
1
Maksimum Çalışma Sıcaklığı
+175°C
Transistör Malzemesi
Si
Uzunluk
10.67mm
Vgs'de Tipik Kapak Şarjı
10 V'de 160 nC
Yükseklik
4.83mm
Minimum Çalışma Sıcaklığı
-55°C
Ürün Ayrıntıları
Automotive N-Channel Power MOSFET, Infineon
Infineon's comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products