Teknik Belgeler
Özellikler
Marka
InfineonMaksimum Sürekli Kollektör Akımı
96 A
Maksimum Kollektör Emitör Gerilimi
600 V
Maksimum Kapı Emitör Gerilimi
±20V
Maksimum Güç Kaybı
330 W
Paket Tipi
TO-247AD
Montaj Tipi
Açık Delik
İletken Tipi
N
Pim Sayısı
3
Anahtarlama Hızı
30kHz
Transistör Yapılandırması
Tek
Boyutlar
15.87 x 5.13 x 20.7mm
Minimum Çalışma Sıcaklığı
-55°C
Maksimum Çalışma Sıcaklığı
+175°C
Menşe
Mexico
Ürün Ayrıntıları
Co-Pack IGBT over 21A, Infineon
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
Stok bilgileri geçici olarak kullanılamıyor.
Ayrıntılı bilgi için iletşime geçiniz
402,367 TL
Each (In a Tube of 25) KDV Hariç
482,84 TL
Each (In a Tube of 25) KDV Dahil
25
402,367 TL
Each (In a Tube of 25) KDV Hariç
482,84 TL
Each (In a Tube of 25) KDV Dahil
25
Toptan Satın Al
Miktar | Birim Fiyat | Per Tüp |
---|---|---|
25 - 25 | 402,367 TL | 10.059,18 TL |
50 - 100 | 382,298 TL | 9.557,45 TL |
125+ | 366,224 TL | 9.155,60 TL |
Teknik Belgeler
Özellikler
Marka
InfineonMaksimum Sürekli Kollektör Akımı
96 A
Maksimum Kollektör Emitör Gerilimi
600 V
Maksimum Kapı Emitör Gerilimi
±20V
Maksimum Güç Kaybı
330 W
Paket Tipi
TO-247AD
Montaj Tipi
Açık Delik
İletken Tipi
N
Pim Sayısı
3
Anahtarlama Hızı
30kHz
Transistör Yapılandırması
Tek
Boyutlar
15.87 x 5.13 x 20.7mm
Minimum Çalışma Sıcaklığı
-55°C
Maksimum Çalışma Sıcaklığı
+175°C
Menşe
Mexico
Ürün Ayrıntıları
Co-Pack IGBT over 21A, Infineon
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.