Infineon BFP840ESDH6327XTSA1 NPN SiGe BJT Transistör, 35 mA, 2,25 V, 4-Pinli SOT-343
Teknik Belgeler
Özellikler
Marka
InfineonTransistör Tipi
NPN
Maksimum DC Kollektör Akımı
35 mA
Maksimum Kollektör Emitör Gerilimi
2.25 V
Paket Tipi
SOT-343
Montaj Tipi
Yüzeye Monte
Maksimum Güç Kaybı
75 mW
Transistör Yapılandırması
Tek
Maksimum Kollektör Taban Gerilimi
2,6 V, 2,9 V
Maksimum Çalışma Frekansı
80 GHz
Pim Sayısı
4
Yonga Başına Eleman Sayısı
1
Maksimum Çalışma Sıcaklığı
+150°C
Boyutlar
2 x 1.25 x 0.8mm
Ürün Ayrıntıları
SiGe RF Bipolar Transistors, Infineon
A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon’s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when used in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.
Bipolar Transistors, Infineon
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1.168,70 TL
23,374 TL Each (In a Pack of 50) (KDV Hariç)
1.402,44 TL
28,049 TL Each (In a Pack of 50) KDV Dahil
Standart
50
1.168,70 TL
23,374 TL Each (In a Pack of 50) (KDV Hariç)
1.402,44 TL
28,049 TL Each (In a Pack of 50) KDV Dahil
Stok bilgileri geçici olarak kullanılamıyor.
Standart
50
Stok bilgileri geçici olarak kullanılamıyor.
| Miktar | Birim Fiyat | Per Paket |
|---|---|---|
| 50 - 950 | 23,374 TL | 1.168,70 TL |
| 1000 - 1950 | 13,166 TL | 658,30 TL |
| 2000 - 2950 | 12,818 TL | 640,90 TL |
| 3000 - 5950 | 12,47 TL | 623,50 TL |
| 6000+ | 12,18 TL | 609,00 TL |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Teknik Belgeler
Özellikler
Marka
InfineonTransistör Tipi
NPN
Maksimum DC Kollektör Akımı
35 mA
Maksimum Kollektör Emitör Gerilimi
2.25 V
Paket Tipi
SOT-343
Montaj Tipi
Yüzeye Monte
Maksimum Güç Kaybı
75 mW
Transistör Yapılandırması
Tek
Maksimum Kollektör Taban Gerilimi
2,6 V, 2,9 V
Maksimum Çalışma Frekansı
80 GHz
Pim Sayısı
4
Yonga Başına Eleman Sayısı
1
Maksimum Çalışma Sıcaklığı
+150°C
Boyutlar
2 x 1.25 x 0.8mm
Ürün Ayrıntıları
SiGe RF Bipolar Transistors, Infineon
A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon’s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when used in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.
Bipolar Transistors, Infineon
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products