Infineon FF1000R17IE4BOSA1 IGBT Modülü PrimePACK3, Seri, maks. 1 kA, 1700 V, Vidalı

RS Stok Numarası: 165-6608Marka: InfineonÜretici Parça Numarası: FF1000R17IE4BOSA1
brand-logo
View all in IGBT'ler

Teknik Belgeler

Özellikler

Maksimum Sürekli Kollektör Akımı

1 kA

Maksimum Kollektör Emitör Gerilimi

1700 V

Maksimum Kapı Emitör Gerilimi

±20V

Maksimum Güç Kaybı

625 kW

Paket Tipi

PrimePACK3

Yapılandırma

Seri

Montaj Tipi

Vida Montajı

İletken Tipi

N

Pim Sayısı

10

Transistör Yapılandırması

Seri

Boyutlar

250 x 89 x 38mm

Minimum Çalışma Sıcaklığı

-40°C

Maksimum Çalışma Sıcaklığı

+150°C

Ürün Ayrıntıları

IGBT Modules, Infineon

The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Stok bilgileri geçici olarak kullanılamıyor.

Ayrıntılı bilgi için iletşime geçiniz

Stok bilgileri geçici olarak kullanılamıyor.

35.666,354 TL

Each (In a Tray of 2) KDV Hariç

42.799,625 TL

Each (In a Tray of 2) KDV Dahil

Infineon FF1000R17IE4BOSA1 IGBT Modülü PrimePACK3, Seri, maks. 1 kA, 1700 V, Vidalı

35.666,354 TL

Each (In a Tray of 2) KDV Hariç

42.799,625 TL

Each (In a Tray of 2) KDV Dahil

Infineon FF1000R17IE4BOSA1 IGBT Modülü PrimePACK3, Seri, maks. 1 kA, 1700 V, Vidalı
Stok bilgileri geçici olarak kullanılamıyor.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Teknik Belgeler

Özellikler

Maksimum Sürekli Kollektör Akımı

1 kA

Maksimum Kollektör Emitör Gerilimi

1700 V

Maksimum Kapı Emitör Gerilimi

±20V

Maksimum Güç Kaybı

625 kW

Paket Tipi

PrimePACK3

Yapılandırma

Seri

Montaj Tipi

Vida Montajı

İletken Tipi

N

Pim Sayısı

10

Transistör Yapılandırması

Seri

Boyutlar

250 x 89 x 38mm

Minimum Çalışma Sıcaklığı

-40°C

Maksimum Çalışma Sıcaklığı

+150°C

Ürün Ayrıntıları

IGBT Modules, Infineon

The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more