Infineon 4Mbit Parallel FRAM Memory 44-Pin TSOP, FM22L16-55-TG
Teknik Belgeler
Özellikler
Marka
InfineonBellek Boyutu
4Mbit
Düzen
256K x 16 bit
Arabirim Tipi
Paralel
Maksimum Rastgele Erişim Süresi
55ns
Montaj Tipi
Yüzeye Monte
Paket Tipi
TSOP
Pim Sayısı
44
Boyutlar
18.51 x 10.26 x 1.04mm
Maksimum Çalışma Besleme Gerilimi
3,6 V
Maksimum Çalışma Sıcaklığı
+85°C
Minimum Çalışma Besleme Gerilimi
2,7 V
Kelime başına Bit Sayısı
16bit
Kelime Sayısı
256K
Minimum Çalışma Sıcaklığı
-40°C
Ürün Ayrıntıları
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
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Stok bilgileri geçici olarak kullanılamıyor.
Ayrıntılı bilgi için iletşime geçiniz
1.240,12 TL
Each KDV Hariç
1.488,14 TL
Each KDV Dahil
1
1.240,12 TL
Each KDV Hariç
1.488,14 TL
Each KDV Dahil
1
Toptan Satın Al
| Miktar | Birim Fiyat |
|---|---|
| 1 - 9 | 1.240,12 TL |
| 10 - 49 | 1.150,25 TL |
| 50 - 99 | 1.081,02 TL |
| 100 - 499 | 1.000,18 TL |
| 500+ | 975,24 TL |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Teknik Belgeler
Özellikler
Marka
InfineonBellek Boyutu
4Mbit
Düzen
256K x 16 bit
Arabirim Tipi
Paralel
Maksimum Rastgele Erişim Süresi
55ns
Montaj Tipi
Yüzeye Monte
Paket Tipi
TSOP
Pim Sayısı
44
Boyutlar
18.51 x 10.26 x 1.04mm
Maksimum Çalışma Besleme Gerilimi
3,6 V
Maksimum Çalışma Sıcaklığı
+85°C
Minimum Çalışma Besleme Gerilimi
2,7 V
Kelime başına Bit Sayısı
16bit
Kelime Sayısı
256K
Minimum Çalışma Sıcaklığı
-40°C
Ürün Ayrıntıları
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products