Infineon IDH05G120C5XKSA1, SiC Schottky Diyot, 1200V, 19,1A, 2+Tab-Pinli TO-220
Teknik Belgeler
Özellikler
Marka
InfineonMontaj Tipi
Açık Delik
Paket Tipi
TO-220
Maksimum Sürekli İleri Akım
19.1A
Tepe Ters Tekrarlayan Gerilim
1200V
Diyot Konfigürasyonu
Tek
Diyot Tipi
SiC Schottky
Pim Sayısı
2 + Tab
Maksimum İleri Gerilim Düşümü
2.6V
Yonga Başına Eleman Sayısı
1
Diyot Teknolojisi
SiC Schottky
Tepe Tekrarlamayan İleri Ani Akım
59A
Menşe
Malaysia
Ürün Ayrıntıları
thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon
The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.
Diodes and Rectifiers, Infineon
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Stok bilgileri geçici olarak kullanılamıyor.
Ayrıntılı bilgi için iletşime geçiniz
84,624 TL
Each (In a Tube of 500) KDV Hariç
101,549 TL
Each (In a Tube of 500) KDV Dahil
500
84,624 TL
Each (In a Tube of 500) KDV Hariç
101,549 TL
Each (In a Tube of 500) KDV Dahil
500
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Teknik Belgeler
Özellikler
Marka
InfineonMontaj Tipi
Açık Delik
Paket Tipi
TO-220
Maksimum Sürekli İleri Akım
19.1A
Tepe Ters Tekrarlayan Gerilim
1200V
Diyot Konfigürasyonu
Tek
Diyot Tipi
SiC Schottky
Pim Sayısı
2 + Tab
Maksimum İleri Gerilim Düşümü
2.6V
Yonga Başına Eleman Sayısı
1
Diyot Teknolojisi
SiC Schottky
Tepe Tekrarlamayan İleri Ani Akım
59A
Menşe
Malaysia
Ürün Ayrıntıları
thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon
The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.
Diodes and Rectifiers, Infineon
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products