IGB30N60H3 Infineon IGBT, 30 A, 600 V, 3+Tab-Pinli D2PAK (TO-263)
Teknik Belgeler
Özellikler
Marka
InfineonMaksimum Sürekli Kollektör Akımı
30 A
Maksimum Kollektör Emitör Gerilimi
600 V
Maksimum Kapı Emitör Gerilimi
±20V
Maksimum Güç Kaybı
187 W
Paket Tipi
D2PAK (TO-263)
Montaj Tipi
Yüzeye Monte
İletken Tipi
N
Pim Sayısı
3+Tab
Transistör Yapılandırması
Tek
Boyutlar
10.31 x 9.45 x 4.57mm
Minimum Çalışma Sıcaklığı
-40°C
Kapı Kapasitansı
1630pF
Maksimum Çalışma Sıcaklığı
+175°C
Enerji Değeri
1.55mJ
Menşe
Malaysia
Ürün Ayrıntıları
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stok bilgileri geçici olarak kullanılamıyor.
Ayrıntılı bilgi için iletşime geçiniz
54,954 TL
Each (On a Reel of 1000) KDV Hariç
65,945 TL
Each (On a Reel of 1000) KDV Dahil
1000
54,954 TL
Each (On a Reel of 1000) KDV Hariç
65,945 TL
Each (On a Reel of 1000) KDV Dahil
1000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Teknik Belgeler
Özellikler
Marka
InfineonMaksimum Sürekli Kollektör Akımı
30 A
Maksimum Kollektör Emitör Gerilimi
600 V
Maksimum Kapı Emitör Gerilimi
±20V
Maksimum Güç Kaybı
187 W
Paket Tipi
D2PAK (TO-263)
Montaj Tipi
Yüzeye Monte
İletken Tipi
N
Pim Sayısı
3+Tab
Transistör Yapılandırması
Tek
Boyutlar
10.31 x 9.45 x 4.57mm
Minimum Çalışma Sıcaklığı
-40°C
Kapı Kapasitansı
1630pF
Maksimum Çalışma Sıcaklığı
+175°C
Enerji Değeri
1.55mJ
Menşe
Malaysia
Ürün Ayrıntıları
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products