Infineon IKP15N60TXKSA1 IGBT, 600 V, 26 A, 3-Pinli TO-220
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Özellikler
Marka
InfineonMaksimum Sürekli Kollektör Akımı
26 A
Maksimum Kollektör Emitör Gerilimi
600 V
Maksimum Kapı Emitör Gerilimi
±20V
Maksimum Güç Kaybı
130 W
Paket Tipi
TO-220
Montaj Tipi
Açık Delik
İletken Tipi
N
Pim Sayısı
3
Transistör Yapılandırması
Tek
Boyutlar
10.36 x 4.57 x 15.95mm
Maksimum Çalışma Sıcaklığı
+175°C
Enerji Değeri
0.81mJ
Minimum Çalışma Sıcaklığı
-40°C
Kapı Kapasitansı
860pF
Ürün Ayrıntıları
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stok bilgileri geçici olarak kullanılamıyor.
Ayrıntılı bilgi için iletşime geçiniz
59,34 TL
Each (In a Pack of 10) KDV Hariç
71,208 TL
Each (In a Pack of 10) KDV Dahil
10
59,34 TL
Each (In a Pack of 10) KDV Hariç
71,208 TL
Each (In a Pack of 10) KDV Dahil
10
Toptan Satın Al
| Miktar | Birim Fiyat | Per Paket |
|---|---|---|
| 10 - 40 | 59,34 TL | 593,40 TL |
| 50 - 90 | 56,373 TL | 563,73 TL |
| 100 - 240 | 54,008 TL | 540,08 TL |
| 250 - 490 | 51,643 TL | 516,43 TL |
| 500+ | 48,074 TL | 480,74 TL |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Teknik Belgeler
Özellikler
Marka
InfineonMaksimum Sürekli Kollektör Akımı
26 A
Maksimum Kollektör Emitör Gerilimi
600 V
Maksimum Kapı Emitör Gerilimi
±20V
Maksimum Güç Kaybı
130 W
Paket Tipi
TO-220
Montaj Tipi
Açık Delik
İletken Tipi
N
Pim Sayısı
3
Transistör Yapılandırması
Tek
Boyutlar
10.36 x 4.57 x 15.95mm
Maksimum Çalışma Sıcaklığı
+175°C
Enerji Değeri
0.81mJ
Minimum Çalışma Sıcaklığı
-40°C
Kapı Kapasitansı
860pF
Ürün Ayrıntıları
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products