IKW25N120H3 Infineon IGBT, 50 A, 1200 V, 3-Pinli TO-247
Teknik Belgeler
Özellikler
Marka
InfineonMaksimum Sürekli Kollektör Akımı
50 A
Maksimum Kollektör Emitör Gerilimi
1200 V
Maksimum Kapı Emitör Gerilimi
±20V
Maksimum Güç Kaybı
326 W
Paket Tipi
TO-247
Montaj Tipi
Açık Delik
İletken Tipi
N
Pim Sayısı
3
Transistör Yapılandırması
Tek
Boyutlar
16.13 x 5.21 x 21.1mm
Minimum Çalışma Sıcaklığı
-40°C
Kapı Kapasitansı
1430pF
Maksimum Çalışma Sıcaklığı
+175°C
Enerji Değeri
4.3mJ
Ürün Ayrıntıları
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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1.357,55 TL
226,258 TL Each (Supplied in a Tube) (KDV Hariç)
1.629,06 TL
271,51 TL Each (Supplied in a Tube) KDV Dahil
Üretime Uygun Paketleme (Tüp)
6
1.357,55 TL
226,258 TL Each (Supplied in a Tube) (KDV Hariç)
1.629,06 TL
271,51 TL Each (Supplied in a Tube) KDV Dahil
Stok bilgileri geçici olarak kullanılamıyor.
Üretime Uygun Paketleme (Tüp)
6
Stok bilgileri geçici olarak kullanılamıyor.
| Miktar | Birim Fiyat | Per Tüp |
|---|---|---|
| 6 - 18 | 226,258 TL | 452,52 TL |
| 20 - 38 | 214,948 TL | 429,90 TL |
| 40 - 98 | 205,378 TL | 410,76 TL |
| 100+ | 176,378 TL | 352,76 TL |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Teknik Belgeler
Özellikler
Marka
InfineonMaksimum Sürekli Kollektör Akımı
50 A
Maksimum Kollektör Emitör Gerilimi
1200 V
Maksimum Kapı Emitör Gerilimi
±20V
Maksimum Güç Kaybı
326 W
Paket Tipi
TO-247
Montaj Tipi
Açık Delik
İletken Tipi
N
Pim Sayısı
3
Transistör Yapılandırması
Tek
Boyutlar
16.13 x 5.21 x 21.1mm
Minimum Çalışma Sıcaklığı
-40°C
Kapı Kapasitansı
1430pF
Maksimum Çalışma Sıcaklığı
+175°C
Enerji Değeri
4.3mJ
Ürün Ayrıntıları
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products