Infineon IKW75N65ES5XKSA1 IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole
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Özellikler
Marka
InfineonMaksimum Sürekli Kollektör Akımı
80 A
Maksimum Kollektör Emitör Gerilimi
650 V
Maksimum Kapı Emitör Gerilimi
±20 (Continuous) V, ±30 (Transient) V
Transistör Sayısı
1
Maksimum Güç Kaybı
395 W
Paket Tipi
TO-247
Montaj Tipi
Açık Delik
İletken Tipi
N
Pim Sayısı
3
Anahtarlama Hızı
30kHz
Transistör Yapılandırması
Tek
Boyutlar
16.13 x 5.21 x 21.1mm
Enerji Değeri
3.35mJ
Minimum Çalışma Sıcaklığı
-40°C
Kapı Kapasitansı
4500pF
Maksimum Çalışma Sıcaklığı
+175°C
Ürün Ayrıntıları
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stok bilgileri geçici olarak kullanılamıyor.
Ayrıntılı bilgi için iletşime geçiniz
220,289 TL
Each (In a Pack of 10) KDV Hariç
264,347 TL
Each (In a Pack of 10) KDV Dahil
10
220,289 TL
Each (In a Pack of 10) KDV Hariç
264,347 TL
Each (In a Pack of 10) KDV Dahil
10
Toptan Satın Al
| Miktar | Birim Fiyat | Per Paket |
|---|---|---|
| 10 - 10 | 220,289 TL | 2.202,89 TL |
| 20 - 40 | 209,281 TL | 2.092,81 TL |
| 50 - 90 | 200,466 TL | 2.004,66 TL |
| 100 - 190 | 187,265 TL | 1.872,65 TL |
| 200+ | 176,257 TL | 1.762,57 TL |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Teknik Belgeler
Özellikler
Marka
InfineonMaksimum Sürekli Kollektör Akımı
80 A
Maksimum Kollektör Emitör Gerilimi
650 V
Maksimum Kapı Emitör Gerilimi
±20 (Continuous) V, ±30 (Transient) V
Transistör Sayısı
1
Maksimum Güç Kaybı
395 W
Paket Tipi
TO-247
Montaj Tipi
Açık Delik
İletken Tipi
N
Pim Sayısı
3
Anahtarlama Hızı
30kHz
Transistör Yapılandırması
Tek
Boyutlar
16.13 x 5.21 x 21.1mm
Enerji Değeri
3.35mJ
Minimum Çalışma Sıcaklığı
-40°C
Kapı Kapasitansı
4500pF
Maksimum Çalışma Sıcaklığı
+175°C
Ürün Ayrıntıları
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products