Infineon IRF540NLPBF N-Kanallı Si MOSFET Transistör, 33 A, 100 V, 3-Pinli I2PAK (TO-262)
Teknik Belgeler
Özellikler
Marka
Infineonİletken Tipi
N
Maksimum Sürekli Tahliye Akımı
33 A
Maksimum Tahliye Kaynağı Gerilimi
100 V
Series
HEXFET
Paket Tipi
I2PAK (TO-262)
Montaj Tipi
Açık Delik
Pim Sayısı
3
Maksimum Tahliye Kaynağı Direnci
44 mΩ
Kanal Modu
Artırma
Maksimum Güç Kaybı
130 W
Transistör Yapılandırması
Tek
Maksimum Kapı Kaynak Gerilimi
-20 V, +20 V
Genişlik
4.83mm
Transistör Malzemesi
Si
Yonga Başına Eleman Sayısı
1
Uzunluk
10.67mm
Vgs'de Tipik Kapak Şarjı
10 V'de 71 nC
Maksimum Çalışma Sıcaklığı
+175°C
Yükseklik
9.65mm
Minimum Çalışma Sıcaklığı
-55°C
İleri Diyot Gerilimi
1.2V
Ürün Ayrıntıları
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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687,30 TL
68,73 TL Each (In a Pack of 10) (KDV Hariç)
824,76 TL
82,476 TL Each (In a Pack of 10) KDV Dahil
Standart
10
687,30 TL
68,73 TL Each (In a Pack of 10) (KDV Hariç)
824,76 TL
82,476 TL Each (In a Pack of 10) KDV Dahil
Stok bilgileri geçici olarak kullanılamıyor.
Standart
10
Stok bilgileri geçici olarak kullanılamıyor.
| Miktar | Birim Fiyat | Per Paket |
|---|---|---|
| 10 - 90 | 68,73 TL | 687,30 TL |
| 100 - 240 | 65,25 TL | 652,50 TL |
| 250 - 490 | 62,524 TL | 625,24 TL |
| 500 - 990 | 59,798 TL | 597,98 TL |
| 1000+ | 55,622 TL | 556,22 TL |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Teknik Belgeler
Özellikler
Marka
Infineonİletken Tipi
N
Maksimum Sürekli Tahliye Akımı
33 A
Maksimum Tahliye Kaynağı Gerilimi
100 V
Series
HEXFET
Paket Tipi
I2PAK (TO-262)
Montaj Tipi
Açık Delik
Pim Sayısı
3
Maksimum Tahliye Kaynağı Direnci
44 mΩ
Kanal Modu
Artırma
Maksimum Güç Kaybı
130 W
Transistör Yapılandırması
Tek
Maksimum Kapı Kaynak Gerilimi
-20 V, +20 V
Genişlik
4.83mm
Transistör Malzemesi
Si
Yonga Başına Eleman Sayısı
1
Uzunluk
10.67mm
Vgs'de Tipik Kapak Şarjı
10 V'de 71 nC
Maksimum Çalışma Sıcaklığı
+175°C
Yükseklik
9.65mm
Minimum Çalışma Sıcaklığı
-55°C
İleri Diyot Gerilimi
1.2V
Ürün Ayrıntıları
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products