IXYS IXA60IF1200NA IGBT, 1200 V, 88 A, 4-Pinli SOT-227B
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Özellikler
Marka
IXYSMaksimum Sürekli Kollektör Akımı
88 A
Maksimum Kollektör Emitör Gerilimi
1200 V
Maksimum Kapı Emitör Gerilimi
±20V
Maksimum Güç Kaybı
290 W
Paket Tipi
SOT-227B
Montaj Tipi
Yüzeye Monte
İletken Tipi
N
Pim Sayısı
4
Transistör Yapılandırması
Tek
Boyutlar
38.23 x 25.25 x 9.6mm
Minimum Çalışma Sıcaklığı
-40°C
Maksimum Çalışma Sıcaklığı
+125°C
Menşe
United States
Ürün Ayrıntıları
IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Ayrıntılı bilgi için iletşime geçiniz
P.O.A.
10
P.O.A.
10
Ideate. Create. Collaborate
JOIN FOR FREE
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Teknik Belgeler
Özellikler
Marka
IXYSMaksimum Sürekli Kollektör Akımı
88 A
Maksimum Kollektör Emitör Gerilimi
1200 V
Maksimum Kapı Emitör Gerilimi
±20V
Maksimum Güç Kaybı
290 W
Paket Tipi
SOT-227B
Montaj Tipi
Yüzeye Monte
İletken Tipi
N
Pim Sayısı
4
Transistör Yapılandırması
Tek
Boyutlar
38.23 x 25.25 x 9.6mm
Minimum Çalışma Sıcaklığı
-40°C
Maksimum Çalışma Sıcaklığı
+125°C
Menşe
United States
Ürün Ayrıntıları
IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products