IXYS MDI75-12A3 IGBT Modülü Y4 M5, maks. 90 A, 1200 V, Panele Monte

RS Stok Numarası: 168-4497Marka: IXYSÜretici Parça Numarası: MDI75-12A3
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Tümünü IGBT'ler içinde gör

Teknik Belgeler

Özellikler

Marka

IXYS

Ürün Tipi

IGBT Modülü

Yapılandırma

Tek

Paket Tipi

Y4-M5

İletken Tipi

N Tipi

Pim Sayısı

7

Minimum Çalışma Sıcaklığı

-40°C

Maksimum Çalışma Sıcaklığı

150°C

Genişlik

34 mm

Uzunluk

94mm

Yükseklik

30mm

Ürün Ayrıntıları

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Tümünü IGBT'ler içinde gör

Stok bilgileri geçici olarak kullanılamıyor.

18.460,13 TL

3.076,688 TL Each (In a Box of 6) (KDV Hariç)

22.152,16 TL

3.692,026 TL Each (In a Box of 6) KDV Dahil

IXYS MDI75-12A3 IGBT Modülü Y4 M5, maks. 90 A, 1200 V, Panele Monte

6

Katlarında sipariş edilebilir 6
618.460,13 TL
1236.920,26 TL
1855.380,38 TL
2473.840,51 TL
3092.300,64 TL
36110.760,77 TL
42129.220,90 TL
48147.681,02 TL
54166.141,15 TL
60184.601,28 TL
66203.061,41 TL
72221.521,54 TL
78239.981,66 TL
84258.441,79 TL
90276.901,92 TL

18.460,13 TL

3.076,688 TL Each (In a Box of 6) (KDV Hariç)

22.152,16 TL

3.692,026 TL Each (In a Box of 6) KDV Dahil

IXYS MDI75-12A3 IGBT Modülü Y4 M5, maks. 90 A, 1200 V, Panele Monte

Stok bilgileri geçici olarak kullanılamıyor.

6

Katlarında sipariş edilebilir 6
618.460,13 TL
1236.920,26 TL
1855.380,38 TL
2473.840,51 TL
3092.300,64 TL
36110.760,77 TL
42129.220,90 TL
48147.681,02 TL
54166.141,15 TL
60184.601,28 TL
66203.061,41 TL
72221.521,54 TL
78239.981,66 TL
84258.441,79 TL
90276.901,92 TL

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Teknik Belgeler

Özellikler

Marka

IXYS

Ürün Tipi

IGBT Modülü

Yapılandırma

Tek

Paket Tipi

Y4-M5

İletken Tipi

N Tipi

Pim Sayısı

7

Minimum Çalışma Sıcaklığı

-40°C

Maksimum Çalışma Sıcaklığı

150°C

Genişlik

34 mm

Uzunluk

94mm

Yükseklik

30mm

Ürün Ayrıntıları

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more