NGB8245NT4G Littlefuse IGBT, 50 A, 500 V, 3-Pinli D2PAK
Teknik Belgeler
Özellikler
Marka
LittelfuseMaksimum Sürekli Kollektör Akımı
50 A
Maksimum Kollektör Emitör Gerilimi
500 V
Maksimum Kapı Emitör Gerilimi
500V
Maksimum Güç Kaybı
150 W
Paket Tipi
D2PAK (TO-263)
Montaj Tipi
Yüzeye Monte
İletken Tipi
N
Pim Sayısı
3
Transistör Yapılandırması
Tek
Boyutlar
9.65 x 10.29 x 4.83mm
Minimum Çalışma Sıcaklığı
-55°C
Maksimum Çalışma Sıcaklığı
+175°C
Ürün Ayrıntıları
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Teklif İsteyiniz
Each (In a Pack of 5) (KDV Hariç)
Standart
5
Teklif İsteyiniz
Each (In a Pack of 5) (KDV Hariç)
Stok bilgileri geçici olarak kullanılamıyor.
Standart
5
Stok bilgileri geçici olarak kullanılamıyor.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Teknik Belgeler
Özellikler
Marka
LittelfuseMaksimum Sürekli Kollektör Akımı
50 A
Maksimum Kollektör Emitör Gerilimi
500 V
Maksimum Kapı Emitör Gerilimi
500V
Maksimum Güç Kaybı
150 W
Paket Tipi
D2PAK (TO-263)
Montaj Tipi
Yüzeye Monte
İletken Tipi
N
Pim Sayısı
3
Transistör Yapılandırması
Tek
Boyutlar
9.65 x 10.29 x 4.83mm
Minimum Çalışma Sıcaklığı
-55°C
Maksimum Çalışma Sıcaklığı
+175°C
Ürün Ayrıntıları
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products