ON Semiconductor FDMC86261P P-Kanallı Si MOSFET Transistör, 2,7 A, 150 V, 8-Pinli Power 33

RS Stok Numarası: 864-8225Marka: ON SemiconductorÜretici Parça Numarası: FDMC86261P
brand-logo

Teknik Belgeler

Özellikler

İletken Tipi

P

Maksimum Sürekli Tahliye Akımı

2,7 A

Maksimum Tahliye Kaynağı Gerilimi

150 V

Paket Tipi

Power 33

Montaj Tipi

Yüzeye Monte

Pim Sayısı

8

Maksimum Tahliye Kaynağı Direnci

269 mΩ

Kanal Modu

Artırma

Minimum Kapı Eşiği Gerilimi

2V

Maksimum Güç Kaybı

40 W

Transistör Yapılandırması

Tek

Maksimum Kapı Kaynak Gerilimi

-25 V, +25 V

Uzunluk

3.3mm

Vgs'de Tipik Kapak Şarjı

10 V'de 17 nC

Yonga Başına Eleman Sayısı

1

Maksimum Çalışma Sıcaklığı

+150°C

Genişlik

3.3mm

Transistör Malzemesi

Si

Yükseklik

0.725mm

Series

PowerTrench

Minimum Çalışma Sıcaklığı

-55°C

Ürün Ayrıntıları

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

89,03 TL

17,806 TL Each (In a Pack of 5) (KDV Hariç)

106,84 TL

21,367 TL Each (In a Pack of 5) KDV Dahil

ON Semiconductor FDMC86261P P-Kanallı Si MOSFET Transistör, 2,7 A, 150 V, 8-Pinli Power 33
Paketlenme türü seçiniz

89,03 TL

17,806 TL Each (In a Pack of 5) (KDV Hariç)

106,84 TL

21,367 TL Each (In a Pack of 5) KDV Dahil

ON Semiconductor FDMC86261P P-Kanallı Si MOSFET Transistör, 2,7 A, 150 V, 8-Pinli Power 33

Stok bilgileri geçici olarak kullanılamıyor.

Paketlenme türü seçiniz

Stok bilgileri geçici olarak kullanılamıyor.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Teknik Belgeler

Özellikler

İletken Tipi

P

Maksimum Sürekli Tahliye Akımı

2,7 A

Maksimum Tahliye Kaynağı Gerilimi

150 V

Paket Tipi

Power 33

Montaj Tipi

Yüzeye Monte

Pim Sayısı

8

Maksimum Tahliye Kaynağı Direnci

269 mΩ

Kanal Modu

Artırma

Minimum Kapı Eşiği Gerilimi

2V

Maksimum Güç Kaybı

40 W

Transistör Yapılandırması

Tek

Maksimum Kapı Kaynak Gerilimi

-25 V, +25 V

Uzunluk

3.3mm

Vgs'de Tipik Kapak Şarjı

10 V'de 17 nC

Yonga Başına Eleman Sayısı

1

Maksimum Çalışma Sıcaklığı

+150°C

Genişlik

3.3mm

Transistör Malzemesi

Si

Yükseklik

0.725mm

Series

PowerTrench

Minimum Çalışma Sıcaklığı

-55°C

Ürün Ayrıntıları

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more