Teknik Belgeler
Özellikler
Marka
ON Semiconductorİletken Tipi
P
Maksimum Sürekli Tahliye Akımı
2 A
Maksimum Tahliye Kaynağı Gerilimi
20 V
Paket Tipi
SOT-23
Montaj Tipi
Yüzeye Monte
Pim Sayısı
3
Maksimum Tahliye Kaynağı Direnci
70 mΩ
Kanal Modu
Artırma
Minimum Kapı Eşiği Gerilimi
0.4V
Maksimum Güç Kaybı
500 mW
Transistör Yapılandırması
Tek
Maksimum Kapı Kaynak Gerilimi
-8 V, +8 V
Transistör Malzemesi
Si
Vgs'de Tipik Kapak Şarjı
4,5 V'de 7,2 nC
Yonga Başına Eleman Sayısı
1
Maksimum Çalışma Sıcaklığı
+150°C
Uzunluk
2.92mm
Genişlik
1.4mm
Seri
PowerTrench
Minimum Çalışma Sıcaklığı
-55°C
Yükseklik
0.94mm
Ürün Ayrıntıları
PowerTrench® P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Stok bilgileri geçici olarak kullanılamıyor.
Ayrıntılı bilgi için iletşime geçiniz
15,394 TL
Each (In a Pack of 5) KDV Hariç
18,473 TL
Each (In a Pack of 5) KDV Dahil
5
15,394 TL
Each (In a Pack of 5) KDV Hariç
18,473 TL
Each (In a Pack of 5) KDV Dahil
5
Toptan Satın Al
Miktar | Birim Fiyat | Per Paket |
---|---|---|
5 - 5 | 15,394 TL | 76,97 TL |
10 - 95 | 10,492 TL | 52,46 TL |
100 - 995 | 4,902 TL | 24,51 TL |
1000 - 2995 | 3,784 TL | 18,92 TL |
3000+ | 3,354 TL | 16,77 TL |
Teknik Belgeler
Özellikler
Marka
ON Semiconductorİletken Tipi
P
Maksimum Sürekli Tahliye Akımı
2 A
Maksimum Tahliye Kaynağı Gerilimi
20 V
Paket Tipi
SOT-23
Montaj Tipi
Yüzeye Monte
Pim Sayısı
3
Maksimum Tahliye Kaynağı Direnci
70 mΩ
Kanal Modu
Artırma
Minimum Kapı Eşiği Gerilimi
0.4V
Maksimum Güç Kaybı
500 mW
Transistör Yapılandırması
Tek
Maksimum Kapı Kaynak Gerilimi
-8 V, +8 V
Transistör Malzemesi
Si
Vgs'de Tipik Kapak Şarjı
4,5 V'de 7,2 nC
Yonga Başına Eleman Sayısı
1
Maksimum Çalışma Sıcaklığı
+150°C
Uzunluk
2.92mm
Genişlik
1.4mm
Seri
PowerTrench
Minimum Çalışma Sıcaklığı
-55°C
Yükseklik
0.94mm
Ürün Ayrıntıları
PowerTrench® P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.