FGH40T100SMD ON Semiconductor IGBT, 80 A, 1000 V, 3-Pinli TO-247
Teknik Belgeler
Özellikler
Marka
ON SemiconductorMaksimum Sürekli Kollektör Akımı
80 A
Maksimum Kollektör Emitör Gerilimi
1000 V
Maksimum Kapı Emitör Gerilimi
±20V
Maksimum Güç Kaybı
333 W
Paket Tipi
TO-247
Montaj Tipi
Açık Delik
İletken Tipi
N
Pim Sayısı
3
Anahtarlama Hızı
1MHz
Transistör Yapılandırması
Tek
Boyutlar
15.87 x 4.82 x 20.82mm
Minimum Çalışma Sıcaklığı
-55°C
Maksimum Çalışma Sıcaklığı
+175°C
Ürün Ayrıntıları
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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448,92 TL
224,46 TL Each (In a Pack of 2) (KDV Hariç)
538,70 TL
269,352 TL Each (In a Pack of 2) KDV Dahil
Standart
2
448,92 TL
224,46 TL Each (In a Pack of 2) (KDV Hariç)
538,70 TL
269,352 TL Each (In a Pack of 2) KDV Dahil
Stok bilgileri geçici olarak kullanılamıyor.
Standart
2
Stok bilgileri geçici olarak kullanılamıyor.
| Miktar | Birim Fiyat | Per Paket |
|---|---|---|
| 2 - 8 | 224,46 TL | 448,92 TL |
| 10 - 98 | 190,82 TL | 381,64 TL |
| 100 - 248 | 152,54 TL | 305,08 TL |
| 250 - 498 | 143,84 TL | 287,68 TL |
| 500+ | 135,72 TL | 271,44 TL |
Ideate. Create. Collaborate
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No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Teknik Belgeler
Özellikler
Marka
ON SemiconductorMaksimum Sürekli Kollektör Akımı
80 A
Maksimum Kollektör Emitör Gerilimi
1000 V
Maksimum Kapı Emitör Gerilimi
±20V
Maksimum Güç Kaybı
333 W
Paket Tipi
TO-247
Montaj Tipi
Açık Delik
İletken Tipi
N
Pim Sayısı
3
Anahtarlama Hızı
1MHz
Transistör Yapılandırması
Tek
Boyutlar
15.87 x 4.82 x 20.82mm
Minimum Çalışma Sıcaklığı
-55°C
Maksimum Çalışma Sıcaklığı
+175°C
Ürün Ayrıntıları
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products