ON Semiconductor FQU1N60CTU N-Kanallı Si MOSFET Transistör, 1 A, 600 V, 3-Pinli IPAK (TO-251)

RS Stok Numarası: 671-5345Marka: ON SemiconductorÜretici Parça Numarası: FQU1N60CTU
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Teknik Belgeler

Özellikler

İletken Tipi

N

Maksimum Sürekli Tahliye Akımı

1 A

Maksimum Tahliye Kaynağı Gerilimi

600 V

Paket Tipi

IPAK (TO-251)

Montaj Tipi

Açık Delik

Pim Sayısı

3

Maksimum Tahliye Kaynağı Direnci

11.5 Ω

Kanal Modu

Artırma

Minimum Kapı Eşiği Gerilimi

2V

Maksimum Güç Kaybı

2,5 W

Transistör Yapılandırması

Tek

Maksimum Kapı Kaynak Gerilimi

-30 V, +30 V

Vgs'de Tipik Kapak Şarjı

10 V'de 4,8 nC

Yonga Başına Eleman Sayısı

1

Maksimum Çalışma Sıcaklığı

+150°C

Uzunluk

6.6mm

Genişlik

2.3mm

Transistör Malzemesi

Si

Seri

QFET

Minimum Çalışma Sıcaklığı

-55°C

Yükseklik

6.1mm

Menşe

Malaysia

Ürün Ayrıntıları

QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor

Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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Teklif İsteyiniz

ON Semiconductor FQU1N60CTU N-Kanallı Si MOSFET Transistör, 1 A, 600 V, 3-Pinli IPAK (TO-251)
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Teklif İsteyiniz

ON Semiconductor FQU1N60CTU N-Kanallı Si MOSFET Transistör, 1 A, 600 V, 3-Pinli IPAK (TO-251)
Stok bilgileri geçici olarak kullanılamıyor.
sticker-359

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Teknik Belgeler

Özellikler

İletken Tipi

N

Maksimum Sürekli Tahliye Akımı

1 A

Maksimum Tahliye Kaynağı Gerilimi

600 V

Paket Tipi

IPAK (TO-251)

Montaj Tipi

Açık Delik

Pim Sayısı

3

Maksimum Tahliye Kaynağı Direnci

11.5 Ω

Kanal Modu

Artırma

Minimum Kapı Eşiği Gerilimi

2V

Maksimum Güç Kaybı

2,5 W

Transistör Yapılandırması

Tek

Maksimum Kapı Kaynak Gerilimi

-30 V, +30 V

Vgs'de Tipik Kapak Şarjı

10 V'de 4,8 nC

Yonga Başına Eleman Sayısı

1

Maksimum Çalışma Sıcaklığı

+150°C

Uzunluk

6.6mm

Genişlik

2.3mm

Transistör Malzemesi

Si

Seri

QFET

Minimum Çalışma Sıcaklığı

-55°C

Yükseklik

6.1mm

Menşe

Malaysia

Ürün Ayrıntıları

QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor

Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more