NGTG12N60TF1G ON Semiconductor IGBT, 88 (Pals) A, 600 V, 3-Pinli TO-3PF

RS Stok Numarası: 801-6801PMarka: ON SemiconductorÜretici Parça Numarası: NGTG12N60TF1G
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Teknik Belgeler

Özellikler

Maksimum Sürekli Kollektör Akımı

88 (Pulse) A

Maksimum Kollektör Emitör Gerilimi

600 V

Maksimum Kapı Emitör Gerilimi

±20V

Maksimum Güç Kaybı

54 W

Paket Tipi

TO-3PF

Montaj Tipi

Açık Delik

İletken Tipi

N

Pim Sayısı

3

Transistör Yapılandırması

Tek

Boyutlar

15.5 x 5.5 x 26.5mm

Maksimum Çalışma Sıcaklığı

+150°C

Ürün Ayrıntıları

IGBT Discretes, ON Semiconductor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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P.O.A.

NGTG12N60TF1G ON Semiconductor IGBT, 88 (Pals) A, 600 V, 3-Pinli TO-3PF
Paketlenme türü seçiniz

P.O.A.

NGTG12N60TF1G ON Semiconductor IGBT, 88 (Pals) A, 600 V, 3-Pinli TO-3PF
Stok bilgileri geçici olarak kullanılamıyor.
Paketlenme türü seçiniz

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Teknik Belgeler

Özellikler

Maksimum Sürekli Kollektör Akımı

88 (Pulse) A

Maksimum Kollektör Emitör Gerilimi

600 V

Maksimum Kapı Emitör Gerilimi

±20V

Maksimum Güç Kaybı

54 W

Paket Tipi

TO-3PF

Montaj Tipi

Açık Delik

İletken Tipi

N

Pim Sayısı

3

Transistör Yapılandırması

Tek

Boyutlar

15.5 x 5.5 x 26.5mm

Maksimum Çalışma Sıcaklığı

+150°C

Ürün Ayrıntıları

IGBT Discretes, ON Semiconductor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more