N-Channel MOSFET, 30 A, 50 V, 3-Pin TO-220AB onsemi BUZ11_NR4941
Teknik Belgeler
Özellikler
Marka
onsemiİletken Tipi
N
Maksimum Sürekli Tahliye Akımı
30 A
Maksimum Tahliye Kaynağı Gerilimi
50 V
Paket Tipi
TO-220AB
Montaj Tipi
Açık Delik
Pim Sayısı
3
Maksimum Tahliye Kaynağı Direnci
40 mΩ
Kanal Modu
Artırma
Minimum Kapı Eşiği Gerilimi
2.1V
Maksimum Güç Kaybı
75 W
Transistör Yapılandırması
Tek
Maksimum Kapı Kaynak Gerilimi
-20 V, +20 V
Genişlik
4.83mm
Yonga Başına Eleman Sayısı
1
Maksimum Çalışma Sıcaklığı
+150°C
Transistör Malzemesi
Si
Uzunluk
10.67mm
Yükseklik
16.51mm
Minimum Çalışma Sıcaklığı
-55°C
Ürün Ayrıntıları
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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Stok bilgileri geçici olarak kullanılamıyor.
Ayrıntılı bilgi için iletşime geçiniz
P.O.A.
50
P.O.A.
50
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Teknik Belgeler
Özellikler
Marka
onsemiİletken Tipi
N
Maksimum Sürekli Tahliye Akımı
30 A
Maksimum Tahliye Kaynağı Gerilimi
50 V
Paket Tipi
TO-220AB
Montaj Tipi
Açık Delik
Pim Sayısı
3
Maksimum Tahliye Kaynağı Direnci
40 mΩ
Kanal Modu
Artırma
Minimum Kapı Eşiği Gerilimi
2.1V
Maksimum Güç Kaybı
75 W
Transistör Yapılandırması
Tek
Maksimum Kapı Kaynak Gerilimi
-20 V, +20 V
Genişlik
4.83mm
Yonga Başına Eleman Sayısı
1
Maksimum Çalışma Sıcaklığı
+150°C
Transistör Malzemesi
Si
Uzunluk
10.67mm
Yükseklik
16.51mm
Minimum Çalışma Sıcaklığı
-55°C
Ürün Ayrıntıları
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products