ON Semiconductor FDB52N20TM N-Kanallı Si MOSFET Transistör, 52 A, 200 V, 3-Pinli D2PAK (TO-263)

RS Stok Numarası: 759-8983PMarka: onsemiÜretici Parça Numarası: FDB52N20TM
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Teknik Belgeler

Özellikler

Marka

onsemi

İletken Tipi

N

Maksimum Sürekli Tahliye Akımı

52 A

Maksimum Tahliye Kaynağı Gerilimi

200 V

Series

UniFET

Paket Tipi

D2PAK (TO-263)

Montaj Tipi

Yüzeye Monte

Pim Sayısı

3

Maksimum Tahliye Kaynağı Direnci

49 mΩ

Kanal Modu

Artırma

Minimum Kapı Eşiği Gerilimi

3V

Maksimum Güç Kaybı

357 W

Transistör Yapılandırması

Tek

Maksimum Kapı Kaynak Gerilimi

-30 V, +30 V

Vgs'de Tipik Kapak Şarjı

10 V'de 49 nC

Genişlik

10.16mm

Transistör Malzemesi

Si

Yonga Başına Eleman Sayısı

1

Uzunluk

9.98mm

Maksimum Çalışma Sıcaklığı

+150°C

Yükseklik

4.572mm

Minimum Çalışma Sıcaklığı

-55°C

Ürün Ayrıntıları

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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4.251,40 TL

85,028 TL Each (Supplied on a Reel) (KDV Hariç)

5.101,68 TL

102,034 TL Each (Supplied on a Reel) KDV Dahil

ON Semiconductor FDB52N20TM N-Kanallı Si MOSFET Transistör, 52 A, 200 V, 3-Pinli D2PAK (TO-263)
Paketlenme türü seçiniz

4.251,40 TL

85,028 TL Each (Supplied on a Reel) (KDV Hariç)

5.101,68 TL

102,034 TL Each (Supplied on a Reel) KDV Dahil

ON Semiconductor FDB52N20TM N-Kanallı Si MOSFET Transistör, 52 A, 200 V, 3-Pinli D2PAK (TO-263)

Stok bilgileri geçici olarak kullanılamıyor.

Paketlenme türü seçiniz

Stok bilgileri geçici olarak kullanılamıyor.

MiktarBirim FiyatPer Makara
50 - 9585,028 TL425,14 TL
100 - 49573,66 TL368,30 TL
500+64,728 TL323,64 TL

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Teknik Belgeler

Özellikler

Marka

onsemi

İletken Tipi

N

Maksimum Sürekli Tahliye Akımı

52 A

Maksimum Tahliye Kaynağı Gerilimi

200 V

Series

UniFET

Paket Tipi

D2PAK (TO-263)

Montaj Tipi

Yüzeye Monte

Pim Sayısı

3

Maksimum Tahliye Kaynağı Direnci

49 mΩ

Kanal Modu

Artırma

Minimum Kapı Eşiği Gerilimi

3V

Maksimum Güç Kaybı

357 W

Transistör Yapılandırması

Tek

Maksimum Kapı Kaynak Gerilimi

-30 V, +30 V

Vgs'de Tipik Kapak Şarjı

10 V'de 49 nC

Genişlik

10.16mm

Transistör Malzemesi

Si

Yonga Başına Eleman Sayısı

1

Uzunluk

9.98mm

Maksimum Çalışma Sıcaklığı

+150°C

Yükseklik

4.572mm

Minimum Çalışma Sıcaklığı

-55°C

Ürün Ayrıntıları

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more