onsemi PowerTrench Dual N/P-Channel MOSFET, 1.9 A, 2.7 A, 20 V, 6-Pin SOT-23 FDC6327C

RS Stok Numarası: 761-3956PMarka: onsemiÜretici Parça Numarası: FDC6327C
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Teknik Belgeler

Özellikler

Marka

onsemi

İletken Tipi

N, P

Maksimum Sürekli Tahliye Akımı

1,9 A, 2,7 A

Maksimum Tahliye Kaynağı Gerilimi

20 V

Paket Tipi

SOT-23

Series

PowerTrench

Montaj Tipi

Yüzeye Monte

Pim Sayısı

6

Maksimum Tahliye Kaynağı Direnci

130 mΩ, 270 mΩ

Kanal Modu

Artırma

Minimum Kapı Eşiği Gerilimi

0.4V

Maksimum Güç Kaybı

960 mW

Transistör Yapılandırması

Yalıtılmış

Maksimum Kapı Kaynak Gerilimi

-8 V, +8 V

Yonga Başına Eleman Sayısı

2

Uzunluk

3mm

Maksimum Çalışma Sıcaklığı

+150°C

Vgs'de Tipik Kapak Şarjı

4,5 V'de 2,85 nC, 4,5 V'de 3,25 nC

Genişlik

1.7mm

Transistör Malzemesi

Si

Yükseklik

1mm

Minimum Çalışma Sıcaklığı

-55°C

Ürün Ayrıntıları

PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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Stok bilgileri geçici olarak kullanılamıyor.

2.865,50 TL

28,655 TL Each (Supplied on a Reel) (KDV Hariç)

3.438,60 TL

34,386 TL Each (Supplied on a Reel) KDV Dahil

onsemi PowerTrench Dual N/P-Channel MOSFET, 1.9 A, 2.7 A, 20 V, 6-Pin SOT-23 FDC6327C
Paketlenme türü seçiniz

2.865,50 TL

28,655 TL Each (Supplied on a Reel) (KDV Hariç)

3.438,60 TL

34,386 TL Each (Supplied on a Reel) KDV Dahil

onsemi PowerTrench Dual N/P-Channel MOSFET, 1.9 A, 2.7 A, 20 V, 6-Pin SOT-23 FDC6327C
Stok bilgileri geçici olarak kullanılamıyor.
Paketlenme türü seçiniz

Stok bilgileri geçici olarak kullanılamıyor.

Ayrıntılı bilgi için iletşime geçiniz

MiktarBirim FiyatPer Makara
100 - 24028,655 TL286,55 TL
250 - 49024,805 TL248,05 TL
500 - 99021,835 TL218,35 TL
1000+19,855 TL198,55 TL

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Teknik Belgeler

Özellikler

Marka

onsemi

İletken Tipi

N, P

Maksimum Sürekli Tahliye Akımı

1,9 A, 2,7 A

Maksimum Tahliye Kaynağı Gerilimi

20 V

Paket Tipi

SOT-23

Series

PowerTrench

Montaj Tipi

Yüzeye Monte

Pim Sayısı

6

Maksimum Tahliye Kaynağı Direnci

130 mΩ, 270 mΩ

Kanal Modu

Artırma

Minimum Kapı Eşiği Gerilimi

0.4V

Maksimum Güç Kaybı

960 mW

Transistör Yapılandırması

Yalıtılmış

Maksimum Kapı Kaynak Gerilimi

-8 V, +8 V

Yonga Başına Eleman Sayısı

2

Uzunluk

3mm

Maksimum Çalışma Sıcaklığı

+150°C

Vgs'de Tipik Kapak Şarjı

4,5 V'de 2,85 nC, 4,5 V'de 3,25 nC

Genişlik

1.7mm

Transistör Malzemesi

Si

Yükseklik

1mm

Minimum Çalışma Sıcaklığı

-55°C

Ürün Ayrıntıları

PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more