ON Semiconductor FDC638APZ P-Kanallı Si MOSFET Transistör, 4,5 A, 20 V, 6-Pinli SOT-23

RS Stok Numarası: 809-0859Marka: onsemiÜretici Parça Numarası: FDC638APZ
brand-logo

Teknik Belgeler

Özellikler

Marka

onsemi

İletken Tipi

P

Maksimum Sürekli Tahliye Akımı

4,5 A

Maksimum Tahliye Kaynağı Gerilimi

20 V

Series

PowerTrench

Paket Tipi

SOT-23

Montaj Tipi

Yüzeye Monte

Pim Sayısı

6

Maksimum Tahliye Kaynağı Direnci

72 mΩ

Kanal Modu

Artırma

Minimum Kapı Eşiği Gerilimi

0.4V

Maksimum Güç Kaybı

1,6 W

Transistör Yapılandırması

Tek

Maksimum Kapı Kaynak Gerilimi

-12 V, +12 V

Genişlik

1.7mm

Transistör Malzemesi

Si

Yonga Başına Eleman Sayısı

1

Uzunluk

3mm

Vgs'de Tipik Kapak Şarjı

4,5 V'de 8 nC

Maksimum Çalışma Sıcaklığı

+150°C

Yükseklik

1mm

Minimum Çalışma Sıcaklığı

-55°C

Ürün Ayrıntıları

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

160,08 TL

8,004 TL Each (In a Pack of 20) (KDV Hariç)

192,10 TL

9,605 TL Each (In a Pack of 20) KDV Dahil

ON Semiconductor FDC638APZ P-Kanallı Si MOSFET Transistör, 4,5 A, 20 V, 6-Pinli SOT-23
Paketlenme türü seçiniz

160,08 TL

8,004 TL Each (In a Pack of 20) (KDV Hariç)

192,10 TL

9,605 TL Each (In a Pack of 20) KDV Dahil

ON Semiconductor FDC638APZ P-Kanallı Si MOSFET Transistör, 4,5 A, 20 V, 6-Pinli SOT-23

Stok bilgileri geçici olarak kullanılamıyor.

Paketlenme türü seçiniz

Stok bilgileri geçici olarak kullanılamıyor.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Teknik Belgeler

Özellikler

Marka

onsemi

İletken Tipi

P

Maksimum Sürekli Tahliye Akımı

4,5 A

Maksimum Tahliye Kaynağı Gerilimi

20 V

Series

PowerTrench

Paket Tipi

SOT-23

Montaj Tipi

Yüzeye Monte

Pim Sayısı

6

Maksimum Tahliye Kaynağı Direnci

72 mΩ

Kanal Modu

Artırma

Minimum Kapı Eşiği Gerilimi

0.4V

Maksimum Güç Kaybı

1,6 W

Transistör Yapılandırması

Tek

Maksimum Kapı Kaynak Gerilimi

-12 V, +12 V

Genişlik

1.7mm

Transistör Malzemesi

Si

Yonga Başına Eleman Sayısı

1

Uzunluk

3mm

Vgs'de Tipik Kapak Şarjı

4,5 V'de 8 nC

Maksimum Çalışma Sıcaklığı

+150°C

Yükseklik

1mm

Minimum Çalışma Sıcaklığı

-55°C

Ürün Ayrıntıları

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more