Dual N/P-Channel-Channel MOSFET, 6.5 A, 9 A, 40 V, 5-Pin DPAK onsemi FDD8424H
Teknik Belgeler
Özellikler
Marka
onsemiİletken Tipi
N, P
Maksimum Sürekli Tahliye Akımı
6,5 A, 9 A
Maksimum Tahliye Kaynağı Gerilimi
40 V
Paket Tipi
DPAK (TO-252)
Seri
PowerTrench
Montaj Tipi
Yüzeye Monte
Pim Sayısı
5
Maksimum Tahliye Kaynağı Direnci
24 mΩ, 54 mΩ
Kanal Modu
Artırma
Maksimum Kapı Eşiği Gerilimi
3V
Minimum Kapı Eşiği Gerilimi
1V
Maksimum Güç Kaybı
3,1 W
Transistör Yapılandırması
Ortak Tahliye
Maksimum Kapı Kaynak Gerilimi
-20 V, +20 V
Genişlik
6.22mm
Transistör Malzemesi
Si
Vgs'de Tipik Kapak Şarjı
10 V'de 14 nC, 10 V'de 17 nC
Yonga Başına Eleman Sayısı
2
Maksimum Çalışma Sıcaklığı
+150°C
Uzunluk
6.73mm
Yükseklik
2.39mm
Minimum Çalışma Sıcaklığı
-55°C
Ürün Ayrıntıları
PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Stok bilgileri geçici olarak kullanılamıyor.
Ayrıntılı bilgi için iletşime geçiniz
2.147,90 TL
42,958 TL Each (Supplied on a Reel) (KDV Hariç)
2.577,48 TL
51,55 TL Each (Supplied on a Reel) KDV Dahil
Üretime Uygun Paketleme (Makara)
50
2.147,90 TL
42,958 TL Each (Supplied on a Reel) (KDV Hariç)
2.577,48 TL
51,55 TL Each (Supplied on a Reel) KDV Dahil
Üretime Uygun Paketleme (Makara)
50
Toptan Satın Al
| Miktar | Birim Fiyat | Per Makara |
|---|---|---|
| 50 - 95 | 42,958 TL | 214,79 TL |
| 100 - 495 | 37,224 TL | 186,12 TL |
| 500 - 995 | 32,712 TL | 163,56 TL |
| 1000+ | 29,798 TL | 148,99 TL |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Teknik Belgeler
Özellikler
Marka
onsemiİletken Tipi
N, P
Maksimum Sürekli Tahliye Akımı
6,5 A, 9 A
Maksimum Tahliye Kaynağı Gerilimi
40 V
Paket Tipi
DPAK (TO-252)
Seri
PowerTrench
Montaj Tipi
Yüzeye Monte
Pim Sayısı
5
Maksimum Tahliye Kaynağı Direnci
24 mΩ, 54 mΩ
Kanal Modu
Artırma
Maksimum Kapı Eşiği Gerilimi
3V
Minimum Kapı Eşiği Gerilimi
1V
Maksimum Güç Kaybı
3,1 W
Transistör Yapılandırması
Ortak Tahliye
Maksimum Kapı Kaynak Gerilimi
-20 V, +20 V
Genişlik
6.22mm
Transistör Malzemesi
Si
Vgs'de Tipik Kapak Şarjı
10 V'de 14 nC, 10 V'de 17 nC
Yonga Başına Eleman Sayısı
2
Maksimum Çalışma Sıcaklığı
+150°C
Uzunluk
6.73mm
Yükseklik
2.39mm
Minimum Çalışma Sıcaklığı
-55°C
Ürün Ayrıntıları
PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products