ON Semiconductor FDD8424H İkili N/P-Kanallı Si MOSFET Transistör, 6,5 A, 9 A, 40 V, 5-Pinli DPAK (TO-252)

RS Stok Numarası: 124-1698Marka: onsemiÜretici Parça Numarası: FDD8424H
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Teknik Belgeler

Özellikler

Marka

onsemi

İletken Tipi

N, P

Maksimum Sürekli Tahliye Akımı

6,5 A, 9 A

Maksimum Tahliye Kaynağı Gerilimi

40 V

Paket Tipi

DPAK (TO-252)

Series

PowerTrench

Montaj Tipi

Yüzeye Monte

Pim Sayısı

5

Maksimum Tahliye Kaynağı Direnci

24 mΩ, 54 mΩ

Kanal Modu

Artırma

Maksimum Kapı Eşiği Gerilimi

3V

Minimum Kapı Eşiği Gerilimi

1V

Maksimum Güç Kaybı

3,1 W

Transistör Yapılandırması

Ortak Tahliye

Maksimum Kapı Kaynak Gerilimi

-20 V, +20 V

Genişlik

6.22mm

Transistör Malzemesi

Si

Yonga Başına Eleman Sayısı

2

Uzunluk

6.73mm

Vgs'de Tipik Kapak Şarjı

10 V'de 14 nC, 10 V'de 17 nC

Maksimum Çalışma Sıcaklığı

+150°C

Yükseklik

2.39mm

Minimum Çalışma Sıcaklığı

-55°C

Ürün Ayrıntıları

PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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Stok bilgileri geçici olarak kullanılamıyor.

82.500,00 TL

33,00 TL Each (On a Reel of 2500) (KDV Hariç)

99.000,00 TL

39,60 TL Each (On a Reel of 2500) KDV Dahil

ON Semiconductor FDD8424H İkili N/P-Kanallı Si MOSFET Transistör, 6,5 A, 9 A, 40 V, 5-Pinli DPAK (TO-252)

82.500,00 TL

33,00 TL Each (On a Reel of 2500) (KDV Hariç)

99.000,00 TL

39,60 TL Each (On a Reel of 2500) KDV Dahil

ON Semiconductor FDD8424H İkili N/P-Kanallı Si MOSFET Transistör, 6,5 A, 9 A, 40 V, 5-Pinli DPAK (TO-252)
Stok bilgileri geçici olarak kullanılamıyor.

Stok bilgileri geçici olarak kullanılamıyor.

Ayrıntılı bilgi için iletşime geçiniz

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Teknik Belgeler

Özellikler

Marka

onsemi

İletken Tipi

N, P

Maksimum Sürekli Tahliye Akımı

6,5 A, 9 A

Maksimum Tahliye Kaynağı Gerilimi

40 V

Paket Tipi

DPAK (TO-252)

Series

PowerTrench

Montaj Tipi

Yüzeye Monte

Pim Sayısı

5

Maksimum Tahliye Kaynağı Direnci

24 mΩ, 54 mΩ

Kanal Modu

Artırma

Maksimum Kapı Eşiği Gerilimi

3V

Minimum Kapı Eşiği Gerilimi

1V

Maksimum Güç Kaybı

3,1 W

Transistör Yapılandırması

Ortak Tahliye

Maksimum Kapı Kaynak Gerilimi

-20 V, +20 V

Genişlik

6.22mm

Transistör Malzemesi

Si

Yonga Başına Eleman Sayısı

2

Uzunluk

6.73mm

Vgs'de Tipik Kapak Şarjı

10 V'de 14 nC, 10 V'de 17 nC

Maksimum Çalışma Sıcaklığı

+150°C

Yükseklik

2.39mm

Minimum Çalışma Sıcaklığı

-55°C

Ürün Ayrıntıları

PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more