onsemi UniFET N-Channel MOSFET, 44 A, 500 V, 3-Pin TO-247 FDH44N50
Teknik Belgeler
Özellikler
Marka
onsemiİletken Tipi
N
Maksimum Sürekli Tahliye Akımı
44 A
Maksimum Tahliye Kaynağı Gerilimi
500 V
Seri
UniFET
Paket Tipi
TO-247
Montaj Tipi
Açık Delik
Pim Sayısı
3
Maksimum Tahliye Kaynağı Direnci
120 mΩ
Kanal Modu
Artırma
Minimum Kapı Eşiği Gerilimi
2V
Maksimum Güç Kaybı
750 W
Transistör Yapılandırması
Tek
Maksimum Kapı Kaynak Gerilimi
-30 V, +30 V
Genişlik
4.82mm
Uzunluk
15.87mm
Vgs'de Tipik Kapak Şarjı
10 V'de 90 nC
Maksimum Çalışma Sıcaklığı
+175°C
Transistör Malzemesi
Si
Yonga Başına Eleman Sayısı
1
Yükseklik
20.82mm
Minimum Çalışma Sıcaklığı
-55°C
İleri Diyot Gerilimi
1.2V
Ürün Ayrıntıları
UniFET™ N-Channel MOSFET, Fairchild Semiconductor
UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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3.317,60 TL
331,76 TL Each (Supplied in a Tube) (KDV Hariç)
3.981,12 TL
398,11 TL Each (Supplied in a Tube) KDV Dahil
Üretime Uygun Paketleme (Tüp)
10
3.317,60 TL
331,76 TL Each (Supplied in a Tube) (KDV Hariç)
3.981,12 TL
398,11 TL Each (Supplied in a Tube) KDV Dahil
Üretime Uygun Paketleme (Tüp)
10
Stok bilgileri geçici olarak kullanılamıyor.
Ayrıntılı bilgi için iletşime geçiniz
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Teknik Belgeler
Özellikler
Marka
onsemiİletken Tipi
N
Maksimum Sürekli Tahliye Akımı
44 A
Maksimum Tahliye Kaynağı Gerilimi
500 V
Seri
UniFET
Paket Tipi
TO-247
Montaj Tipi
Açık Delik
Pim Sayısı
3
Maksimum Tahliye Kaynağı Direnci
120 mΩ
Kanal Modu
Artırma
Minimum Kapı Eşiği Gerilimi
2V
Maksimum Güç Kaybı
750 W
Transistör Yapılandırması
Tek
Maksimum Kapı Kaynak Gerilimi
-30 V, +30 V
Genişlik
4.82mm
Uzunluk
15.87mm
Vgs'de Tipik Kapak Şarjı
10 V'de 90 nC
Maksimum Çalışma Sıcaklığı
+175°C
Transistör Malzemesi
Si
Yonga Başına Eleman Sayısı
1
Yükseklik
20.82mm
Minimum Çalışma Sıcaklığı
-55°C
İleri Diyot Gerilimi
1.2V
Ürün Ayrıntıları
UniFET™ N-Channel MOSFET, Fairchild Semiconductor
UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products